Charge transfer mediated giant photo-amplification in air-stable $α$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts

Shreyasi Das,Arup Ghorai,Sourabh Pal,Somnath Mahato,Soumen Das,Samit K. Ray

DOI: https://doi.org/10.48550/arXiv.2301.03355

2022-12-30

Abstract:Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $\alpha$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $\alpha$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 Å) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.

Materials Science,Applied Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to improve the performance and stability of photo - FETs (photo - field - effect transistors) in high - humidity environments. Specifically, by constructing a novel mixed - dimensional heterostructure photo - FET (CsPbI₃/WS₂ MvWH photo - FET), the researchers have solved several key problems existing in traditional single - channel - layer photo - FETs:

1. **High dark current**: Traditional single - channel - layer photo - FETs have a high dark current due to the lack of an in - plane built - in electric field.
2. **Requiring a large operating gate voltage**: In order to make the device operate in the fully depleted mode, a large gate voltage is usually required.
3. **Absorption and amplification processes occur simultaneously in the same layer**: This will reduce the performance of the device.

To solve these problems, the researchers adopted the following strategies:

- **Introducing asymmetric metal electrodes (Cr/WS₂/Au)**: Utilize the Schottky barrier to induce rectifying characteristics at the Au/WS₂ interface, thereby significantly reducing the dark current.
- **Using α - CsPbI₃ nanocrystals as sensitizers**: These nanocrystals have excellent light - absorption properties and opposite doping polarities, and can form junctions in the vertical direction to promote subsequent charge separation.
- **Improving environmental stability**: Fill the vacancies (Pb²⁺ centers) on the surface of CsPbI₃ nanocrystals with sulfur atoms to protect them from environmental degradation, thereby maintaining high performance under high - humidity conditions.

### Key improvement points

1. **Low dark current**: By introducing asymmetric metal electrodes and the Schottky barrier, an extremely low dark current (~10⁻¹² A) has been achieved.
2. **High responsivity**: At zero - gate - bias voltage, the device exhibits a responsivity as high as ~10² A/W, and at a 40 - V gate - bias voltage, the responsivity can reach ~10⁴ A/W.
3. **Broad - spectral response**: The device has a good response to light in the entire visible - light range.
4. **High - humidity stability**: Under humidity conditions of 50 - 65%, the device can still maintain excellent performance.

### Summary

This research, by constructing a mixed - dimensional heterostructure photo - FET (CsPbI₃/WS₂ MvWH photo - FET), not only solves the problems of high dark current and large gate voltage in traditional photo - FETs but also demonstrates excellent stability and performance in high - humidity environments, providing new ideas and methods for the future development of integrated nano - optoelectronic systems.