Exciton-Plasmon Coupling Mediated Superior Photoresponse in 2D Hybrid Phototransistors

Shubhrasish Mukherjee,Didhiti Bhattacharya,Samit Kumar Ray,Atindra Nath Pal

2023-03-13

Abstract:The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light absorption due to their small absorption cross section, limits their realistic application. While light-matter interaction mediated by strong exciton-plasmon coupling has been demonstrated to improve absorbance and spontaneous emission in a coupled TMDC and metallic nanostructures, the fabrication of tunable broadband phototransistor with high quantum yield is still a challenging task. By synthesizing Ag nanoparticles (Ag NPs) capped with a thin layer of polyvinylpyrrolidone (PVP) through chemical route, we report a lithography-free fabrication of a large area broadband superior gate-tunable hybrid phototransistor based on monolayer graphene decorated by WS$_2$-Ag NPs in a three-terminal device configuration. The fabricated device exhibits extremely high photoresponsivity (up to $3.2\times 10^4$ A/W) which is more than 5 times higher than the bare graphene/WS$_2$ hybrid device, along with a low noise equivalent power (NEP) (~10$^{-13}$ W/Hz$^{0.5}$, considering 1/f noise) and high specific detectivity ~1010 Jones in the wide (325-730 nm) wavelength region. The additional PVP capping of Ag NPs helps to suppress the direct charge and heat transfer and most importantly, increases the device stability by preventing the degradation of WS$_2$-Ag hybrid system. The enhanced optical properties of the hybrid device are explained via dipole mediated strong exciton-plasmon coupling, corroborated by COMSOL Multiphysics simulation. Our work demonstrates a strategy towards obtaining an environment-friendly, scalable, high-performance broadband phototransistor by tuning the exciton-plasmon coupling for new generation opto-electronic devices.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to improve the photoresponse performance of two - dimensional (2D) material - based optoelectronic devices, especially for the problem of low light absorption. Specifically, the paper aims to develop a high - performance, tunable broadband phototransistor by enhancing exciton - plasmon coupling, in order to achieve higher responsivity, lower noise - equivalent power (NEP) and higher specific detectivity. The following are the core problems in the paper and their solutions:

### 1. **Problem Background**
Two - dimensional materials such as graphene and transition - metal dichalcogenides (TMDCs, e.g., WS₂) have great potential in optoelectronic devices due to their atomic - level thickness, high transparency and excellent carrier mobility. However, these materials have low light - absorption efficiency because of their small absorption cross - sections, which limits their practical applications.

### 2. **Specific Problems**
- **Low Light Absorption**: The light - absorption ability of 2D materials is limited. In particular, the light absorption of graphene is only about 2% of the incident light.
- **Lack of Tunability**: Existing 2D - material - based phototransistors are difficult to achieve efficient and tunable photoresponse in a wide - band range.
- **Poor Stability**: In practical environments, the stability and durability of devices are a challenge.

### 3. **Solutions**
To overcome the above problems, the paper proposes a three - terminal phototransistor based on a graphene/WS₂ - Ag nanoparticle (Ag NPs) heterostructure. The specific methods are as follows:
- **Introduction of Ag Nanoparticles**: Ag nanoparticles wrapped by polyvinylpyrrolidone (PVP) were prepared by chemical synthesis and deposited on the WS₂ layer. The PVP layer can effectively prevent direct charge, energy and heat transfer while enhancing the optical properties.
- **Exciton - Plasmon Coupling**: The local surface plasmon resonance (LSPR) effect of Ag nanoparticles was utilized to enhance the exciton - plasmon coupling in WS₂, thereby significantly improving the light - absorption and photoresponse performance.
- **Device Structure Design**: A single - layer graphene was used as the conductive channel, and the WS₂ - Ag nanoparticle composite was used as the light - absorption layer to construct a three - terminal device structure, achieving excellent photoresponse characteristics.

### 4. **Experimental Results**
- **Responsivity**: The device exhibits extremely high responsivity in the wavelength range of 325 - 730 nm, with a maximum value of up to 3.2 × 10⁴ A/W, which is about 5 times higher than that of the bare graphene/WS₂ device.
- **Noise - Equivalent Power (NEP)**: The NEP is as low as ~10⁻¹³ W/Hz⁰·⁵.
- **Specific Detectivity (D*)**: The specific detectivity is as high as ~10¹⁰ Jones.
- **Stability**: The device exhibits extremely high stability under normal environmental conditions and can maintain a stable photocurrent even after three months.

### 5. **Conclusion**
By introducing Ag nanoparticles and optimizing exciton - plasmon coupling, the paper has successfully developed a high - performance, tunable broadband phototransistor, solving the problems of low light absorption and poor stability in 2D - material - based optoelectronic devices. This achievement provides new ideas and technical paths for the design of next - generation optoelectronic devices.

### Formula Summary
The key formulas involved in the paper include:
- **Responsivity (R)**:
\[
R=\frac{I_{ph}}{P_{eff}}
\]
where \(I_{ph} = I_{light}-I_{dark}\) is the photocurrent and \(P_{eff}\) is the effective illumination power.

- **Noise - Equivalent Power (NEP)**:
\[
NEP = \frac{S_I}{R}
\]
where \(S_I\) is the total noise current spectral density.

- **Specific Detectivity (D*)**:
\[
D^*=\sqrt{\frac{A}{NEP}}
\]
where \(A\) is the effective area of the device.

These formulas are used to evaluate photodetectors.