Highly Photoresponsive Charge-Sensitive Infrared Phototransistors With A Dynamically Controlled Optical Gate

Jie Xu,Le Yang,Haochi Yu,Qianchun Weng,Pingping Chen,Bo Zhang,Ting-Ting Kang,Susumu Komiyama,Wei Lu,Zhenghua An
DOI: https://doi.org/10.1063/1.4961938
IF: 4
2016-01-01
Applied Physics Letters
Abstract:Charge-sensitive infrared phototransistors (CSIPs) with a built-in field-effect-induced amplification mechanism have much higher infrared photoresponsivity (>= 10(3) A/W) than conventional detectors, which is often restricted by background black-body radiation induced saturation. Here, we report that dynamically controlling the electrostatic potential of the photosensitive floating gate of a CSIP can counterbalance this background-induced saturation effect. As a result, the CSIP photoresponsivity can be improved by about one order of magnitude, reaching as high as similar to 1.2 x 10(4) A/W to external blinking light. Our work suggests that time-domain manipulation could be an agile degree of freedom in optimizing the CSIP performance and provide insight into operating more general phototransistors for a wide variety of optoelectronic applications. Published by AIP Publishing.
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