Negative Photoconductivity of InAs Nanowires

Yuxiang Han,Xiao Zheng,Mengqi Fu,Dong Pan,Xing Li,Yao Guo,Jianhua Zhao,Qing Chen

DOI: https://doi.org/10.1039/c5cp06139c

IF: 3.3

2016-01-01

Physical Chemistry Chemical Physics

Abstract:Negative photoconductivity is observed in InAs nanowires without a surface defective layer, and is induced by gas adsorption and the photogating effect.

What problem does this paper attempt to address?

Switching from Negative to Positive Photoconductivity Toward Intrinsic Photoelectric Response in InAs Nanowire.

Yuxiang Han,Mengqi Fu,Zhiqiang Tang,Xiao Zheng,Xianghai Ji,Xiaoye Wang,Weijian Lin,Tao Yang,Qing Chen

DOI: https://doi.org/10.1021/acsami.6b13775

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO2, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.
Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires

Zhencun Pan,Shaoyun Huang,Yifeng Zhou,Dong Pan,Jianhua Zhao,Hongqi Xu

DOI: https://doi.org/10.1109/iciprm.2019.8819089

2019-01-01

Abstract:We present low-temperature transport studies of high quality InAs/GaSb core/shell nanowires tuned by double gate structures. The nanowire is grown by molecular-beam-epitaxy method. We demonstrate clear ambipolar transport characteristics. In between the n- and p-type conductance regions, a low conductance region, arising from an energy gap, is found tunable and can even be closed at certain conditions by the double gates. Applying magnetic field, we find that the energy gap can be closed in a magnetic-field along specific direction. Particularly, negative magnetoresistance is observed in certain energy-gap regions and a transition from negative magnetoresistance to positive magnetoresistance can be tuned by the double gates. The negative magnetoresistance phenomena are found persistent at higher temperature against weak antilocalization effects.
Regulating the bipolar response of InAs nanowire photodetector and waveguide integration

Zhiqiang Wang,Liwei Liu,Zhipeng Zhong,Xiang Li,Yan Chen,Junju Zhang,Wu Shi,Xutao Zhang,Jianlu Wang,Junhao Chu,Hai Huang

DOI: https://doi.org/10.1063/5.0196228

IF: 4

2024-03-04

Applied Physics Letters

Abstract:III–V Indium Arsenide (InAs) nanowire photodetectors have attracted intensive research attention due to their high carrier mobility, direct and narrow bandgap, and nanoscale dimensions, offering immense potential in nanoscale optoelectronics, particularly for applications in photonic integrated circuits. Despite extensive studies on the properties of InAs nanowires, their photoresponse remains intricate, displaying bipolar behavior (i.e., positive and negative photoresponse) within the same device under varying conditions. However, the underlying driving mechanism remains unclear. In this work, we have systematically studied the transition between the negative photoresponse and positive photoresponse in the InAs nanowire photodetector under different conditions. We found the bipolar photoresponse is directly related to the occupation status of the surface trap states, and it could be effectively regulated by the gate voltage, power intensity, as well as the illumination duration. Furthermore, we developed a waveguide-integrated InAs nanowire photodetector using electron photoresist with an optical loss as low as 0.122 dB/μm. This achievement underscores its potential for application in photonic integrated photodetectors, laying the groundwork for future integration of InAs nanowire photodetectors into photonic integrated circuits.

physics, applied
Controllable Inverse Photoconductance in Semiconducting Nanowire Films

Rui Wang,Jin‐Long Wang,Tian Liu,Zhen He,Heng Wang,Jian‐Wei Liu,Shu‐Hong Yu

DOI: https://doi.org/10.1002/adma.202204698

IF: 29.4

2022-07-20

Advanced Materials

Abstract:As a typical p‐type semiconductor, tellurium (Te) has been widely studied for the construction of photodetectors. However, only the positive photoconductance of Te‐based photodetectors based on the photoconductive effect has been observed in reported literatures. Herein, we report for the first time on an unusual but interesting phenomenon that tellurium nanowires (Te NWs) behave negative photoresponse to positive photoresponse under enlarged optical intensities from UV to VIS‐IR region. According to the experiments and simulations, adsorbed oxygen on the surface of Te NWs plays a significant role in the abnormal photoresponse. The inverse photoconductance can be attributed to the competition between the photoconductive effect and the oxygen desorption effect. Besides, the influence of the size and layers of Te NWs are also discussed. This inverse photoconductance phenomenon is further explored by introducing the Te‐Au heterojunction system. The hot electrons injection on the Te‐Au heterojunction interface induces more obvious tendency to behave negative photoresponse. These findings will benefit the potential applications of Te NWs‐based photodetectors. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Negative photoconductivity induced by surface plasmon polaritons in Ag nanowire macrobundles.

Jia-Lin Sun,Wei Zhang,Jia-Lin Zhu,Yang Bao

DOI: https://doi.org/10.1364/OE.18.004066

IF: 3.8

2010-01-01

Optics Express

Abstract:We study experimentally and theoretically the transport properties of Ag nanowire macrobundles in the presence of light irradiation. We have observed significant negative photoconductivity induced by the interaction between electrons and the excited surface plasmon polaritons (SPPs). As temperature T increases from 77 K to 304 K, the dark resistivity rho(d) without light irradiation increases linearly with T, and the resistivity change Delta rho due to light irradiation decreases nonlinearly with increasing T. The current change vertical bar Delta I vertical bar due to light irradiation, which is proportional to the laser intensity, also decreases nonlinearly with increasing T. We explain well the experimental results using our proposed model with a new scattering channel due to the interaction between electrons and SPPs. Both our experimental and theoretical results reveal the novel phenomena due to the combination of photonics and electronics properties of Ag nanowires and they will be useful for scientific research, and technical applications. (C) 2010 Optical Society of America
High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity

Xinzhe Wang,Dong Pan,Mei Sun,Fengjiao Lyu,Jianhua Zhao,Qing Chen

DOI: https://doi.org/10.1021/acsami.1c05226

2021-05-25

Abstract:Low-dimensional narrow-band-gap III–V semiconductors have great potential in high-performance electronics, photonics, and quantum devices. However, high-performance nanoscale infrared photodetectors based on isolated two-dimensional (2D) III–V compound semiconductors are still rare. In this work, we demonstrate a new type of photodetector based on the InAs nanosheet. The photodetector has high optoelectronic response in the ultraviolet-infrared band (325–2100 nm) at room temperature. The high-performance photodetector has very high responsivity (∼1231 A/W), EQE (2.2 × 105 %), and detectivity (5.46 × 1010 Jones) to 700 nm light at low operating voltage (∼0.1 V). These results indicate that 2D InAs nanosheet devices have great potential in nano-optoelectronic devices and integrated optoelectronic devices. In addition, we observe for the first time that the InAs nanosheet devices have a negative photoconductivity (NPC) that is not only affected by the wavelength but also related to the optical power intensity of the light. After analyzing experimental data, we propose that the origin of the NPC may come from electron trapping, and two competing mechanisms of optical absorption and the photogating effect in the photoelectric response process cause the dependence on the light wavelength and optical power intensity.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05226?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05226</a>.Wavelength-dependent photoresponsivity of the devices; influence of gate voltage on the photoelectric performance of the devices; enlarged switching response curve; experimental setup for measuring the response time; I–V curves and the intensity-dependence of Iphoto under the illumination of the lights with 325, 633, and 1310 nm wavelengths; effect of PMMA coating; transfer curves in linear coordinates; and statistical results of the photoelectric performance of the devices (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05226/suppl_file/am1c05226_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Negative and Positive Photoconductivity Modulated by Light Wavelengths in Carbon Nanotube Film

Jia-Lin Zhu,Guowei Zhang,Jinquan Wei,Jia-Lin Sun

DOI: https://doi.org/10.1063/1.4754624

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We explore the photoconductive properties of double-walled carbon nanotube film under laser illumination at different wavelengths in both ambient air and vacuum. In our experimental measurements, the photoconductivity of the film shows a strong dependence on the wavelength of light and can be changed from negative to positive by fully removing oxygen. We propose that competition among photoexcitation, photodesorption, and surface plasmon polaritons is responsible for these interesting phenomena. Our results are expected to provide potential applications in the field of nano-optoelectronic sensors based on carbon nanotubes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754624]
Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Tengfei Xu,Hailu Wang,Xiaoyao Chen,Man Luo,Lili Zhang,Yueming Wang,Fansheng Chen,Chongxin Shan,Chenhui Yu

DOI: https://doi.org/10.1088/1361-6528/ab8591

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
High-detectivity InAs Nanowire Photodetectors with Spectral Response from Ultraviolet to Near-Infrared

Zhe Liu,Tao Luo,Bo Liang,Gui Chen,Gang Yu,Xuming Xie,Di Chen,Guozhen Shen

DOI: https://doi.org/10.1007/s12274-013-0356-0

2013-01-01

Abstract:InAs is a direct, narrow band gap (0.354 eV) material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 10 3 AW −1 , 1.03 × 10 6 %, and 2.6 × 10 11 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.
Photocurrent and Photoconductance Properties of a GaAs Nanowire

S. Thunich,L. Prechtel,D. Spirkoska,G. Abstreiter,A. Fontcuberta i Morral,A. W. Holleitner

DOI: https://doi.org/10.1063/1.3193540

2009-05-22

Abstract:We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.

Mesoscale and Nanoscale Physics,Materials Science
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure

S. Golovynskyi,O.I. Datsenko,L. Seravalli,G. Trevisi,P. Frigeri,E. Gombia,Baikui Li,Junle Qu

DOI: https://doi.org/10.1016/j.mee.2020.111367

IF: 2.3

2020-06-01

Microelectronic Engineering

Abstract:InAs/GaAs quantum dot photodetector photoresponse spectra consist of quantum dot, wetting layer and GaAs components, however, they frequently contain features attributed to defect levels. In this study we focus on the origin of an unwanted negative photovoltage component in order to find a design allowing to eliminate these undesirable effects. Photoelectric properties of vertical InAs/GaAs quantum dot structures grown on semi-insulating (si) and n+-GaAs wafers are analyzed. It is found that the photoresponse drop above 1.37 eV in the photovoltage spectrum, observed with si-GaAs substrate, is originated from shallow defect levels in the unintentional space-charge area created at the interface between the substrate and n+-GaAs buffer. The intrinsic field in that area is opposite to the top pn junction, according to modelling calculations, and it reduces the photoelectric response. Photoelectric characterization of the heterostructure grown on n+-GaAs indicates that the utilization of n+-GaAs substrate helps to avoid this band bending and to eliminate its negative effects, increasing the total photoresponse.

engineering, electrical & electronic,nanoscience & nanotechnology,optics,physics, applied
Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Xiaomei Yao,Xutao Zhang,Tingting Kang,Zhiyong Song,Qiang Sun,Dongdong Wei,Jin Zou,Pingping Chen

DOI: https://doi.org/10.21203/rs.3.rs-73463/v2

2020-01-01

Abstract:Abstract A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The MIGS (metal-induced gap states) is induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field, thus upgrade the photo responsivity and photo detectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81×1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the non-linear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single Inas Nanowire

Hehai Fang,Weida Hu,Peng Wang,Nan Guo,Wenjin Luo,Dingshan Zheng,Fan Gong,Man Luo,Hongzheng Tian,Xutao Zhang,Chen Luo,Xing Wu,Pingping Chen,Lei Liao,Anlian Pan,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1021/acs.nanolett.6b02860

IF: 10.8

2016-01-01

Nano Letters

Abstract:One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wenna Du,Xiaoguang Yang,Huayong Pan,Xianghai Ji,Haiming Ji,Shuai Luo,Xingwang Zhang,Zhanguo Wang,Tao Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b03587

IF: 10.8

2016-01-01

Nano Letters

Abstract:We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
Optical Quenching Of Photoconductivity In Cdse Single Nanowires Via Waveguiding Excitation

Fuxing Gu,Pan Wang,Huakang Yu,Bing Guo,Limin Tong

DOI: https://doi.org/10.1364/OE.19.010880

IF: 3.8

2011-01-01

Optics Express

Abstract:We demonstrate broadband optical quenching of photoconductivity in CdSe single nanowires with low excitation power. Using 1550-nm-wavelength light with 10-nW power for waveguiding excitation, we observe a typical responsivity of 0.5 A/W for quenching the photoconductivity established by 10-mu W 660-nm-wavelength background light in a 403-nm-diameter CdSe nanowire, with detectable limit of the quenching power down to pW level at room temperature, which is several orders of magnitude lower than those reported previously. This large quenching effect originates from the enhanced light-defect interaction in the nanowires via waveguiding excitation. These results open new opportunities for noninvasive characterization of deep-level defect states in low-dimensional semiconductor nanomaterials, and novel optoelectronic applications of semiconductor nanowires such as high-sensitive broadband photodetection. (C) 2011 Optical Society of America
Room-temperature, High-Gain, Broad-Spectrum InAs Nanowire Infrared Photodetectors

Weida Hu,Peng Wang,Nan Guo,Pingping Chen,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1109/irmmw-thz.2015.7327564

2015-01-01

Abstract:In this paper, we review our recent progress on low dimensional room-temperature, high-gain, and broad-spectrum photodetectors based on InAs nanowires. Several novel infrared photodetectors based on InAs nanowire are fabricated showing a high photo-gain at room temperature.
Anomalous and Highly Efficient Inas Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

Nan Guo,Weida Hu,Lei Liao,SenPo Yip,Johnny C. Ho,Jinshui Miao,Zhi Zhang,Jin Zou,Tao Jiang,Shiwei Wu,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1002/adma.201403664

IF: 29.4

2014-01-01

Advanced Materials

Abstract:Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer

LuLu Chen,Stephanie O. Adeyemo,H. Aruni Fonseka,Huiyun Liu,Srabani Kar,Hui Yang,Anton Velichko,David J. Mowbray,Zhiyuan Cheng,Ana M. Sanchez,Hannah J Joyce,Yunyan Zhang

DOI: https://doi.org/10.1021/acs.nanolett.2c00805

IF: 10.8

2022-04-14

Nano Letters

Abstract:The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2–3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30–40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.2c00805.Photoconductivity decay data for unpassivated InAs nanowires (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Anomalous Photoelectrical Properties Through Strain Engineering Based on a Single Bent InAsSb Nanowire

Xiaomei Yao,Xutao Zhang,Qiang Sun,Dongdong Wei,Pingping Chen,Jin Zou

DOI: https://doi.org/10.1021/acsami.0c16028

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In this study, electrical and photoresponse properties of bent InAsSb nanowires (NWs) were investigated to explore the impact of bending strain on the photoelectrical properties. The corresponding morphological and structural observations demonstrate the phase segregation and strain in the core-shell zinc-blende-structured InAsSb NWs. It is found that the device made of bent InAsSb individual NW presents the switch from negative photoconductivity (NPC) and positive photoconductivity (PPC). The transformation between NPC and PPC can be achieved by not only gate voltage but also bias voltage, indicating the potential in the pervasive computing of bent InAsSb NWs. This work combines the semiconductor properties, light excitation, and piezoelectric effect of the InAsSb NWs, providing new ideas for next-generation photoelectrical nanodevices.
Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

L. V. Lutsev,V. V. Pavlov,P. A. Usachev,A. A. Astretsov,A. I. Stognij,N. N. Novitskii

DOI: https://doi.org/10.1063/1.4770377

2012-09-17

Abstract:In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.

Mesoscale and Nanoscale Physics,Materials Science

Negative Photoconductivity of InAs Nanowires

Switching from Negative to Positive Photoconductivity Toward Intrinsic Photoelectric Response in InAs Nanowire.

Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires

Regulating the bipolar response of InAs nanowire photodetector and waveguide integration

Controllable Inverse Photoconductance in Semiconducting Nanowire Films

Negative photoconductivity induced by surface plasmon polaritons in Ag nanowire macrobundles.

High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity

Negative and Positive Photoconductivity Modulated by Light Wavelengths in Carbon Nanotube Film

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

High-detectivity InAs Nanowire Photodetectors with Spectral Response from Ultraviolet to Near-Infrared

Photocurrent and Photoconductance Properties of a GaAs Nanowire

Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single Inas Nanowire

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Optical Quenching Of Photoconductivity In Cdse Single Nanowires Via Waveguiding Excitation

Room-temperature, High-Gain, Broad-Spectrum InAs Nanowire Infrared Photodetectors

Anomalous and Highly Efficient Inas Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer

Anomalous Photoelectrical Properties Through Strain Engineering Based on a Single Bent InAsSb Nanowire

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime