Abstract:The fermi-level pinning effect caused by low-order contact interface influences the performance of carbon nanotube (CNT) network field-effect transistors (FETs). In this paper, ambipolar CNT network FETs subjected to van der Waals (vdW) contact are demonstrated with the negligible Fermi-level pinning effect by using a physical transfer approach. The vdW contact method allows for the metal and CNT network to retain their intrinsic states without direct chemical bonding and interface interactions, leading to low injection barrier and contact resistance (Rc). Therefore, the field-effect mobilities of vdW metal-semiconductor (MS) contact devices in regions of dominance of the holes (μp) and electrons (μn) were 18.71 and 2.4 cm2 V−1 s−1 and yielded enhancements 2 and 10 times, respectively, beyond those of devices with typically evaporated electrodes. In addition, to develop ambipolar devices with balanced output capability, two-dimensional materials (h-BN and graphene) were inserted into the MS interface to tune the injection barrier. Because the metal work function was effectively reduced by inserting the h-BN layer, devices with h-BN inserted obtained values of μp and μn of 15.85 and 5.1 cm2 V−1 s−1, respectively. For devices with graphene, because of its field-modulated band alignment capability, μn improved to 8.38 cm2 V−1 s−1, while μp dropped slightly to 17.5 cm2 V−1 s−1. Therefore, the vdW contact method is a highly efficient integration strategy for high-performance CNT network FETs, and the different insertion layers can efficiently tune the ambipolar transportation of CNT network FETs rather than using different contact metals. This research provides an avenue for the design of future CNT network-based electronics.

Electrostatic effects on contacts to carbon nanotube transistors

Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes

Investigation on self-heating effect in carbon nanotube field-effect transistors

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

Affine and fundamental vector fields

Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors.

Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Comprehensive Insights into Effect of Van Der Waals Contact on Carbon Nanotube Network Field-Effect Transistors

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

Contact Length Scaling in Graphene Field-Effect Transistors

On Gate Capacitance Of Nanotube Networks

All-around Contact for Carbon Nanotube Field-Effect Transistors Made by Ac Dielectrophoresis

Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Interpretation of Coulomb Oscillations in Carbon-Nanotube-based Field-Effect Transistors

Determination of individual contact interfaces in carbon nanotube network-based transistors

Interference effects in electronic transport through metallic single-wall carbon nanotubes