Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes

Aron W. Cummings,Julien Varennes,François Léonard

DOI: https://doi.org/10.1109/TNANO.2013.2282902

2014-03-17

Abstract:We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very strong, resulting in a small Schottky barrier for current injection in the top layer and large Schottky barriers for current injection in the deeper layers. As a consequence, the majority of the current flows through the top layer of the array. Our simulations show that doping of the CNT array can alleviate this problem, even without direct contact to each tube in the array; however, we find that the charge transfer length is unusually long in arrays and increases with the number of CNT layers under the contact. We also show that a bottom gate can modulate the contact resistance, but only very weakly. These results are important for the design of electronic and optoelectronic devices based on CNT arrays, because they suggest that increasing the thickness of the array does little to improve the device performance unless the film is strongly doped at the contacts and the contact is long, or unless each tube in the array is directly contacted by the metal.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are as follows: When three - dimensional carbon nanotube (CNT) arrays are in contact with metals, the electrical transport properties are affected by the electrostatic shielding effect, resulting in the current being mainly conducted through the top - layer carbon nanotubes, while the contribution of the deep - layer carbon nanotubes is very small. Specifically:

1. **Current mainly concentrated in the top layer**: For undoped carbon nanotube arrays, when high - or low - work - function metals are used as top contacts, the electrostatic shielding effect is very strong, making the Schottky barrier of the top - layer carbon nanotubes small, while that of the deep - layer carbon nanotubes is large. Therefore, most of the current only passes through the top - layer carbon nanotubes.

2. **How to increase the conductance of deep - layer carbon nanotubes**: In order to make full use of the carbon nanotubes in the entire array, it is necessary to find ways to reduce the Schottky barrier of the deep - layer carbon nanotubes, so that they can also effectively participate in electrical transport.

3. **Effects of doping and gate regulation**: The effects of doping and bottom gates on contact resistance were studied, and it was found that doping can significantly reduce the Schottky barrier of deep - layer carbon nanotubes, while the bottom gates have a weaker influence on the middle and top layers.

4. **Effect of contact length**: The effect of contact length on contact resistance was explored, and it was found that in actual devices, the contact length must be long enough to make all multi - layer carbon nanotubes play a role.

The solution of these problems is crucial for the design of electronic and optoelectronic devices based on carbon nanotube arrays, because they directly affect the performance and reliability of the devices.