Affine and fundamental vector fields

Bozhidar Z. Iliev

DOI: https://doi.org/10.48550/arXiv.math/0602006

2006-02-01

Abstract:This is a review with examples concerning the concepts of affine (in particular, constant and linear) vector fields and fundamental vector fields on a manifold. The affine, linear and constant vector fields on a manifold are shown to be in a bijective correspondence with the fundamental vector fields on it of respectively general affine, general linear and translation groups (locally) represented on the manifold via the described in this work left actions; in a case of the manifolds R^n and C^n, the actions mentioned have the usual meaning of affine, linear and translation transformations.

Differential Geometry,Mathematical Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **the crosstalk problem between carbon nanotube devices, especially how the contact and channel effects affect the performance of multi - nanotube devices**.

### Specific problem description:

1. **Influence of Coulomb interaction**:
- In low - dimensional systems, the Coulomb interaction plays a crucial role in device characteristics. Although the Coulomb interaction within a single carbon nanotube has been studied, the interaction between different nanotubes in multi - nanotube devices has not been fully understood.

2. **Integration of multi - nanotube devices**:
- As devices based on multiple nanotubes become more and more common in experiments, understanding the interaction between nanotubes is crucial for improving device performance and density.

3. **Device density problem**:
- The research aims to determine the important length scale of the interaction between nanotubes to guide the design of high - density nanotube devices.

### Main research content:

- **Calculation method**:
- Use the non - equilibrium Green’s function (NEGF) technique for self - consistent calculations to study the characteristics of multiple parallel nanotubes in planar carbon nanotube transistors.

- **Result analysis**:
- Analyzed the transistor characteristics at different nanotube spacings and determined a length scale. Below this length, the interaction between nanotubes becomes significant.
- For long - channel devices, this length scale is mainly determined by the thickness of the gate oxide layer and decreases exponentially with the increase of the dielectric constant.

### Key findings:

- **Short - channel devices**:
- Very high device density can be achieved.

- **Long - channel devices**:
- The nanotube spacing needs to be kept within a certain range (e.g., 15 nm) to avoid the influence of interaction on device performance.

- **Application of high - dielectric - constant materials**:
- Using high - \( \kappa \) dielectric materials can significantly reduce the important length scale, thus allowing for higher device density.

Through these studies, the author hopes to provide theoretical guidance for future experiments and further explore the interaction between nanotubes.