Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part II: Photoluminescence

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators for Spectroscopic Chemical Sensing

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Highly luminescent a-SiOx<Er>/SiO2/Si multilayer structure

Laser microstructuring of Si surfaces for low-threshold field-electron emission

An Optically-Pumped Silicon Evanescent Microring Resonator Laser

Demonstration of Yb3+-doped and Er3+/Yb3+-codoped On-Chip Microsphere Lasers

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Rare earth silicates as gain media for silicon photonics [Invited]

High-Q Silica Microdisk Optical Resonators with Large Wedge Angles on a Silicon Chip

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Demonstration of an erbium-doped microsphere laser on a silicon chip

Fabrication of SiO 2 Microdisk Optical Resonator

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

Integration of fiber coupled high-Q silicon nitride microdisks with atom chips