Demonstration of an erbium-doped microsphere laser on a silicon chip

huibo fan,shiyue hua,xiaoshun jiang,min xiao

DOI: https://doi.org/10.1088/1612-2011/10/10/105809

IF: 1.704

2013-01-01

Laser Physics Letters

Abstract:We demonstrate a low-threshold microsphere laser on a silicon chip, fabricated from erbium-doped silica sol-gel film. Single-longitudinal mode lasing emission is observed from a 37 mu m diameter microsphere cavity with an erbium ion concentration of 2 x 10(19) cm(-3). The measured lasing threshold of the silica microsphere laser is as low as 4.8 mu W.