Raman Lasing in a Silica Microdisk Resonator

Xinyu Cheng,Jiaxin Gu,Longfu Xiao,Guanyu Li,Xiaoshun Jiang,Min Xiao

DOI: https://doi.org/10.1364/cleopr.2018.tu3h.3

2018-01-01

Abstract:We have demonstrated a chip-based Raman laser by using a silica microdisk resonator with an intrinsic optical Q-factor of 1.5×10 7 . The achieved lasing threshold is as low as 3.9 mw with a conversion efficiency of 7.5%.

What problem does this paper attempt to address?

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Jintian Lin,Yingxin Xu,Jiangxin Song,Jialei Tang,Zhiwei Fang,Min Wang,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1117/12.2071737

2015-01-01

Abstract:We report on fabrication of microresonators of high quality (high-Q) factors in both glass and crystalline materials by femtosecond laser 3D micromachining. Based on this novel approach, we obtained high-Q microresonators of non-in-plane geometries in glass materials such as fused silica and Nd:glass and demonstrated lasing at a pump power as low as 69 microwatts. We also fabricated on-chip microresonators of sub-100 mu m diameters in crystalline materials including calcium fluoride and lithium niobate, and demonstrated efficient second harmonic generation using the high-Q lithium niobate microresonator. Furthermore, femtosecond laser 3D micromachining allows direct integration of the microresonators with other functional microcomponents, such as a microfluidic mixer and a microheater, leading to compact microdevices with enhanced functionalities. Our technique opens new avenues for fabricating high-Q microresonators with either 2D or 3D geometries on various types of dielectric materials.
Low-threshold Raman Laser from an On-Chip, High-Q, Polymer-Coated Microcavity.

Bei-Bei Li,Yun-Feng Xiao,Meng-Yuan Yan,William R. Clements,Qihuang Gong

DOI: https://doi.org/10.1364/ol.38.001802

IF: 3.6

2013-01-01

Optics Letters

Abstract:We study the stimulated Raman emission of a high-Q polydimethylsiloxane (PDMS)-coated silica microsphere on a silicon chip. In this hybrid structure, as the thickness of the PDMS coating increases, the spatial distribution of the whispering gallery modes moves inside the PDMS layer, and the light emission switches from silica Raman lasing to PDMS Raman lasing. The Raman shift of the PDMS Raman laser is measured at 2900 cm(-1), corresponding to the strongest Raman fingerprint of bulk PDMS material. The threshold for this PDMS Raman lasing is demonstrated to be as low as 1.3 mW. This type of Raman emission from a surface-coated high-Q microcavity not only provides a route for extending lasing wavelengths, but also shows potential for detecting specific analytes.
Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

M. Wang,J. Lin,Y. Xu,Z. Fang,Z. Liu,W. Fang,Y. Cheng

DOI: https://doi.org/10.1364/cleo_at.2016.jth2a.39

2016-01-01

Abstract:We report on fabrication of on-chip lithium niobate (LN) microresonators with high Q/V ratio by femtosecond laser micromachining. A Purcell-factor of 2.8×10 3 is obtained in a microdisk with a diameter of 6.42 μm.
Dry-etched Ultrahigh-Q Silica Microdisk Resonators on a Silicon Chip

Jiaxin Gu,Jie Liu,Ziqi Bai,Han Wang,Xinyu Cheng,Guanyu Li,Menghua Zhang,Xinxin Li,Qi Shi,Min Xiao,Xiaoshun Jiang

DOI: https://doi.org/10.1364/prj.412840

IF: 7.6

2021-01-01

Photonics Research

Abstract:We demonstrate the fabrication of ultrahigh quality (Q) factor silica microdisk resonators on a silicon chip by inductively coupled plasma (ICP) etching. We achieve a dry-etched optical microresonator with an intrinsic Q factor as high as 1.94 × 10 8 from a 1-mm-diameter silica microdisk with a thickness of 4 μm. Our work provides a chip-based microresonator platform operating in the ultrahigh-Q region that will be useful in nonlinear photonics such as Brillouin lasers and Kerr microcombs.
Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

Jingwei Li,Ruixuan Wang,Adnan A. Afridi,Yaoqin Lu,Xiaodong Shi,Wenhan Sun,Haiyan Ou,Qing Li

DOI: https://doi.org/10.1021/acsphotonics.3c01750

IF: 7

2024-02-27

ACS Photonics

Abstract:Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with >50% power efficiency in an integrated silicon carbide platform for the first time. By fine-tuning the free spectral range (FSR) of 43 μm-radius silicon carbide microresonators, the Stokes resonance corresponding to the dominant Raman shift of 777 cm^(-1) (23.3 THz) is aligned to the center of the Raman gain spectrum, resulting in a...

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Free-space Coupled, Ultralow-Threshold Raman Lasing from a Silica Microcavity

Xue-Feng Jiang,Yun-Feng Xiao,Qi-Fan Yang,Linbo Shao,William R. Clements,Qihuang Gong

DOI: https://doi.org/10.1063/1.4820133

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We report Raman lasing in a slightly deformed silica microcavity using an efficient free-space coupling technique, with an absorbed pump threshold as low as 100 μW in the 1550 nm wavelength band. This ultralow threshold originates from the ultrahigh quality factors of whispering gallery modes, exceeding 108, even though the microcavity is deformed from a circular symmetry. Furthermore, the threshold of free-space coupled Raman lasing is experimentally demonstrated to show a strict inverse square dependence on the intrinsic quality factor of the cavity mode, which agrees well with the theoretical prediction.
Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Yufei Huang,Di Xia,Pingyang Zeng,Jiaxin Zhao,Zelin Yang,Suwan Sun,Liyang Luo,Guiying Hu,Dong Liu,Yufei Li,Hairun Guo,Bin Zhang,Zhaohui Li

DOI: https://doi.org/10.1002/lpor.202100443

2021-07-25

Abstract:Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a singular Raman effect among amorphous materials. Yet, the Raman lasing performance in high quality and chip integrated ChG microresonators remains unexplored. Here, we demonstrate an engineered Raman lasing dynamic based on home developed photonic integrated high-Q ChG microresonators. With a quality factor above 10^6, we achieve the record-low lasing threshold 3.25 mW among integrated planar photonic platforms. Both the single-mode Raman lasers and a broadband Raman-Kerr comb are observed and characterized, which is dependent on the dispersion of our flexible photonic platform and engineered via tuning the waveguide geometric size. The tunability of such a chipscale Raman laser is also demonstrated through tuning the pump wavelength and tuning the operating temperature on the chip. This allows for the access of single-mode lasing at arbitrary wavelengths in the range 1615-1755 nm. Our results may contribute to the understanding of rich Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to chip-scale efficient Raman lasers that is highly desired in spectroscopic applications in the infrared.

Optics
High-Q Silica Microdisk Optical Resonators with Large Wedge Angles on a Silicon Chip

Guanyu Li,Pei Liu,Xiaoshun Jiang,Chao Yang,Jiyang Ma,Hongya Wu,Min Xiao

DOI: https://doi.org/10.1364/prj.3.000279

IF: 7.6

2015-01-01

Photonics Research

Abstract:We experimentally demonstrate high optical quality factor silica microdisk resonators on a silicon chip with large wedge angles by reactive ion etching. For 2-μm-thick microresonators, we have achieved wedge angles of 59°, 63°, 70°, and 79° with optical quality factors of 2.4 × 107, 8.1 × 106, 5.9 × 106, and 7.4 × 106, respectively, from ～80 μmdiameter microresonators in the 1550 nm wavelength band. Also, for 1-μm-thick microresonators, we have obtained an optical quality factor of 7.3 × 106 with a wedge angle of 74°.
Raman laser from an optical resonator with a grafted single molecule monolayer

Xiaoqin Shen,Hyungwoo Choi,Dongyu Chen,Wei Zhao,Andrea M. Armani

DOI: https://doi.org/10.1038/s41566-019-0563-7

2019-11-19

Abstract:Raman-based technologies have enabled many ground-breaking scientific discoveries related to surface science, single molecule chemistry and biology. For example, researchers have identified surface bound molecules by their Raman vibrational modes and demonstrated polarization-dependent Raman gain. However, a surface constrained Raman laser has yet to be demonstrated because of the challenges associated with achieving a sufficiently high photon population located at a surface to transition from spontaneous to stimulated Raman scattering. Here, advances in surface chemistry and in integrated photonics are combined to demonstrate lasing based on surface stimulated Raman scattering (SSRS). By creating an oriented, constrained Si-O-Si monolayer on the surface of integrated silica optical microresonators, the requisite conditions for SSRS are achieved with low threshold powers (200microW). The expected polarization-dependence of the SSRS due to the orientation of the Si-O-Si bond is observed. Due to the ordered monolayer, the Raman lasing efficiency is improved from ~5% to over 40%.

Optics,Mesoscale and Nanoscale Physics,Applied Physics
Raman Laser From An On Chip, High Q Polymer Microcavity

Bei-Bei Li,Xue-Feng Jiang,Qihuang Gong,Yun-Feng Xiao

DOI: https://doi.org/10.1364/cleo_at.2013.jw2a.39

2013-01-01

Abstract:By coating a layer of polydimethylsiloxane (PDMS) on the silica microcavity surface, we observe the Raman laser emission from PDMS, which is to our knowledge the first demonstration of polymer cavity Raman laser.
An all-silicon Raman laser

Haisheng Rong,Ansheng Liu,Richard Jones,Oded Cohen,Dani Hak,Remus Nicolaescu,Alexander Fang,Mario Paniccia

DOI: https://doi.org/10.1038/nature03273

IF: 64.8

2005-01-20

Nature

Abstract:The possibility of light generation and/or amplification in silicon has attracted a great deal of attention for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron-hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, surface-textured bulk silicon and Si/SiGe quantum cascade structures. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures. In fact, net optical gain in the range 2-11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.
Microcavity Raman lasing and sensing application

Bei-Bei Li,Xue-Feng Jiang,Li Wang,Yun-Feng Xiao

DOI: https://doi.org/10.1364/np.2016.nth3a.7

2016-01-01

Abstract:We demonstrated low-threshold Raman lasing in a slightly deformed microcavity. By monitoring the beat frequency of split-mode microcavity Raman lasers, single nanoparticle detection was experimentally realized.
Ultralow-threshold Neodymium-Doped Microsphere Lasers on a Silicon Chip

Yang Ding,Huibo Fan,Xun Zhang,Xiaoshun Jiang,Min Xiao

DOI: https://doi.org/10.1016/j.optcom.2016.01.028

IF: 2.4

2016-01-01

Optics Communications

Abstract:We demonstrate ultralow-threshold neodymium-doped silica microsphere lasers on a silicon chip with lasing wavelengths of ~900nm and ~1060nm. Neodymium-doped microsphere cavities are fabricated with a series of doping concentrations using silica sol–gel films. Experimentally, we observe single-mode lasing emissions from the high-Q microsphere cavities with a threshold of as low as 1.2µW.
Low threshold anti-Stokes Raman laser on-chip

Hyungwoo Choi,Dongyu Chen,Fan Du,Rene Zeto,Andrea Armani

DOI: https://doi.org/10.1364/PRJ.7.000926

IF: 7.6

2019-11-22

Photonics Research

Abstract:Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices leverage their ultrahigh quality factors ( Q ), allowing submilliwatt stimulated Raman scattering (SRS) lasing thresholds to be achieved. A closely related nonlinear behavior to SRS is stimulated anti-Stokes Raman scattering (SARS). This nonlinear optical process combines the pump photon with the SRS photon to generate an upconverted photon. Therefore, in order to achieve SARS, the efficiency of the SRS process must be high. As a result, achieving SARS in on-chip resonant cavities has been challenging due to the low lasing efficiencies of these devices. In the present work, metal-doped ultrahigh Q ( Q>107 ) silica microcavity arrays are fabricated on-chip. The metal-dopant plays multiple roles in improving the device performance. It increases the Raman gain of the cavity material, and it decreases the optical mode area, thus increasing the circulating intensity. As a result, these devices have SRS lasing efficiencies that are over 10× larger than conventional silica microcavities while maintaining low lasing thresholds. This combination enables SARS to be generated with submilliwatt input powers and significantly improved anti-Stokes Raman lasing efficiency. © 2019 Chinese Laser Press

optics
Demonstration of an erbium-doped microsphere laser on a silicon chip

huibo fan,shiyue hua,xiaoshun jiang,min xiao

DOI: https://doi.org/10.1088/1612-2011/10/10/105809

IF: 1.704

2013-01-01

Laser Physics Letters

Abstract:We demonstrate a low-threshold microsphere laser on a silicon chip, fabricated from erbium-doped silica sol-gel film. Single-longitudinal mode lasing emission is observed from a 37 mu m diameter microsphere cavity with an erbium ion concentration of 2 x 10(19) cm(-3). The measured lasing threshold of the silica microsphere laser is as low as 4.8 mu W.
High Efficiency Raman Lasing in Integrated GaN Microresonators

Zhaoqin He,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sw3o.7

2024-01-01

Abstract:We demonstrate high efficiency integrated Raman laser based on high-Q GaN microresonators. A threshold pump power of ~ 21 mW and a slope efficiency of ~ 44.5% are recorded.
On-Chip Diamond Raman Laser

Pawel Latawiec,Vivek Venkataraman,Michael J. Burek,Birgit J. M. Hausmann,Irfan Bulu,Marko Loncar

DOI: https://doi.org/10.1364/OPTICA.2.000924

2015-09-02

Abstract:Synthetic single-crystal diamond has recently emerged as a promising platform for Raman lasers at exotic wavelengths due to its giant Raman shift, large transparency window and excellent thermal properties yielding a greatly enhanced figure-of-merit compared to conventional materials. To date, diamond Raman lasers have been realized using bulk plates placed inside macroscopic cavities, requiring careful alignment and resulting in high threshold powers (~W-kW). Here we demonstrate an on-chip Raman laser based on fully-integrated, high quality-factor, diamond racetrack micro-resonators embedded in silica. Pumping at telecom wavelengths, we show Stokes output discretely tunable over a ~100nm bandwidth around 2-{\mu}m with output powers >250 {\mu}W, extending the functionality of diamond Raman lasers to an interesting wavelength range at the edge of the mid-infrared spectrum. Continuous-wave operation with only ~85 mW pump threshold power in the feeding waveguide is demonstrated along with continuous, mode-hop-free tuning over ~7.5 GHz in a compact, integrated-optics platform.

Optics
Mid-infrared Raman Lasers and Kerr-frequency Combs from an All-Silica Narrow-Linewidth Microresonator/fiber Laser System

Shuisen Jiang,Changlei Guo,Hongyan Fu,Kaijun Che,Huiying Xu,Zhiping Cai

DOI: https://doi.org/10.1364/oe.412157

IF: 3.8

2020-01-01

Optics Express

Abstract:Mid-infrared (mid-IR) lasers have great applications in bio-molecular sensing due to strong vibrational fingerprints in this wavelength range. However, it is a huge challenge to realize mid-IR lasers in conventional silica materials. Here, we demonstrate the generation of mid-IR Raman lasers and Kerr-frequency combs from an all-silica microresonator/fiber laser system. A single wavelength narrow-linewidth laser at ∼2 µm is first realized by using an ultrahigh Q-factor silica whispering-gallery-mode (WGM) microresonator as mode-selection mirror, and thulium-doped silica fiber as gain medium. Due to the strong intensity enhancement in the microresonator itself, multiple third-order nonlinear optical effects are observed, which include stimulated Stokes and anti-Stokes Raman scattering, and (cascaded) four-wave-mixing (FWM). The stimulated Stokes and anti-Stokes Raman scattering shift the initial 2 µm narrow-linewidth laser to as far as ∼2.75 µm and ∼1.56 µm, respectively. While the cascaded FWM helps to form a Kerr-frequency comb with a broad bandwidth of ∼900 nm and a mode spacing of twice of the microresonator free-spectral-range. This work offers a simple and effective route to realize all-silica mid-IR lasers based on enhanced optical nonlinearity in WGM microresonators.

Raman Lasing in a Silica Microdisk Resonator

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Low-threshold Raman Laser from an On-Chip, High-Q, Polymer-Coated Microcavity.

Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

Dry-etched Ultrahigh-Q Silica Microdisk Resonators on a Silicon Chip

Efficient Raman Lasing and Raman-Kerr Interaction in an Integrated Silicon Carbide Platform

Free-space Coupled, Ultralow-Threshold Raman Lasing from a Silica Microcavity

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

High-Q Silica Microdisk Optical Resonators with Large Wedge Angles on a Silicon Chip

Raman laser from an optical resonator with a grafted single molecule monolayer

Raman Laser From An On Chip, High Q Polymer Microcavity

An all-silicon Raman laser

Microcavity Raman lasing and sensing application

Ultralow-threshold Neodymium-Doped Microsphere Lasers on a Silicon Chip

Low threshold anti-Stokes Raman laser on-chip

Demonstration of an erbium-doped microsphere laser on a silicon chip

High Efficiency Raman Lasing in Integrated GaN Microresonators

On-Chip Diamond Raman Laser

Mid-infrared Raman Lasers and Kerr-frequency Combs from an All-Silica Narrow-Linewidth Microresonator/fiber Laser System