Abstract:Surfaces of metal oxides are of crucial importance for a variety of technological applications such as heterogeneous catalysis, thin film growth, gas sensing, and corrosion prevention [1]. Due to the complexities of oxides in crystal structure and electronic structure, however, the surface science of oxides lags far behind that of metals or semiconductors. Conventional surface-science techniques, typically scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), are usually limited to surfaces of single crystals with relatively simple structures. Metal oxides are usually good insulators, either band insulators or Mott insulators, making them not suitable for STM, LEED, and most of spectroscopic methods using low energy electrons as probes. On the other hand, the complex atomic structures of oxides results in too many structural parameters to be determined by spectroscopy or diffraction methods. Recent developments in high-resolution transmission electron microscopy (TEM) provide us opportunities to overcome the above difficulties. With the realization of aberration-correction, the point resolution of TEM has been improved into the milestone 1 Angstrom scale. In addition, the correction of the spherical aberration has almost eliminated the contrast delocalization in high-resolution images. Therefore, high resolution TEM becomes an even more powerful tool than before for materials research at a truly atomic-scale. Here, we will present our recent works on atomic and electronic structure of oxide surfaces [2-3]. We will show that the structure and dynamics of oxide surfaces can be directly imaged and measured at the sub-angstrom scale with an accuracy of picometers, comparable to that obtained by conventional surface science techniques on single crystals.

Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Control of lectronic onduction at an xide eterointerface using olar dsorbates

Direct Atomic Imaging of Oxide Surfaces

Probing Lattice Vibrations At Sio2/Si Surface And Interface With Nanometer Resolution

Probing lattice vibration at surface and interface of SiO$_2$/Si with nanometer resolution.

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

In Situ SXS and XAFS Measurements of Electrochemical Interface

Atomic Structural Model of the Si/SiO_2 Interface

Direct Observation of Ordered Structures During Oxidation of Si(111)

On the interpretation of valence band photoemission spectra at organic-metal interfaces

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Core-Level Photoelectron Spectroscopy Probing Local Strain at Silicon Surfaces and Interfaces

Structural Understanding of Self-Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Interface Structure and Phase of Epitaxial SrTiO3 (110) Thin Films Grown Directly on Silicon

Band-bending at buried SiO2/Si interface as probed by XPS

Observation of Local Electronic Structures of Adatom Vacancies Insi(111)−(7×7)surface in Real Space

Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2

Observation Of Local Electronic Structures Of Adatom Vacancies In Si(111)-(7x7) Surface In Real Space

Structure and Electronic Properties of SiO2/Si Multilayer Superlattices: Si K Edge and L3,2 Edge X-Ray Absorption Fine Structure Study