Abstract:Strontium titanate (SrTiO$_{3}$, STO) stands out as a promising material for various electronic applications thanks to its exceptional dielectric properties. Molecular beam epitaxy is one of the few techniques which allows epitaxial growth of STO directly on industry-relevant silicon substrates. However, maintaining precise stoichiometry and high crystalline quality in this process remains a significant challenge. Establishing this is essential to obtain STO with bulk-like dielectric properties and to minimize leakage current and optical absorbance. In this study, the importance of cationic stoichiometry and the effect of thickness are investigated for STO thin films epitaxially grown on silicon. We employed real-time reflection high-energy electron diffraction (RHEED) as a feedback loop mechanism to counteract Sr source oxidation and maintain a constant flux. Additionally, high-temperature post-growth annealing treatments in O$_{2}$ were investigated to promote layer relaxation and reduce oxygen vacancy concentration, thereby improving the physical, electrical, and optical properties of stoichiometric STO. As a result, high-quality STO thin films exceeding 100 nm were successfully fabricated featuring a bulk-like out-of-plane lattice parameter and refractive index, as well as rocking curve full width at half maximum below 0.2°, smooth surface (R$_{q}$ < 0.2 nm) and a leakage current density below 1E-7 A/cm$^{2}$.

Interface Structure and Phase of Epitaxial SrTiO3 (110) Thin Films Grown Directly on Silicon

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Stoichiometry and Thickness of Epitaxial SrTiO$_{3}$ on Silicon (001): an Investigation of Physical, Optical and Electrical Properties

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Single Crystalline Highly Epitaxial Pt Thin Films On (001) Srtio3

All-epitaxial Growth of Single-Crystalline Ba0.6Sr0.4TiO3/Ir/MgO/Si Heterostructures

Initial Growth of Srtio3 on Sr/Si(001) Studied by Scanning Tunneling Microscope

Stable Structure and Effects of the Substrate Ti Pre-Treatment on the Epitaxial Growth of SrTiO 3 on GaAs

Epitaxial growth and interface of (1 1 1)-oriented spinel Li0.5Fe2.5O4 film on SrTiO3(0 0 1) substrate

Interfacial Structure in Epitaxial Perovskite Oxides on (001) Ge Crystal

Electronic Structures of the SrTiO3(110) Surface in Different Reconstructions.

Epitaxial growth of Fe3O4 (111) on SrTiO3 (001) substrates

Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO3 Thin Films Grown on (001)-Oriented Si Substrates

Interface Modulated Structure of Highly Epitaxial (pb,sr)tio3 Thin Films on (001) MgO

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

Enhanced Superconductivity in SrTiO$_3$-based Interfaces via Amorphous Al2O3 Capping