Abstract:The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as transmission electron microscopy or high-resolution X-ray diffraction, which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular μ-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. μ-Raman provides insight into strain values and distributions of strained layers with different thicknesses and germanium concentrations, but its lateral resolution is constrained by the Abbe diffraction limit. TERS, on the other hand, emerges as a powerful non-destructive technique capable of overcoming diffraction limits by exploiting the combination of an atomic force microscope with a Raman spectrometer. This breakthrough makes it possible to estimate the chemical composition and induced strain in the lattice by evaluating the Raman peak position shifts in strained and unstrained silicon layers, providing crucial insights for nanoscale strain control. In particular, this paper focuses on the TERS characterization of Si 0.7 Ge 0.3 epitaxial layers grown on a silicon-on-insulator device, demonstrating the effectiveness of this technique and the high lateral resolution that can be achieved.

Core-Level Photoelectron Spectroscopy Probing Local Strain at Silicon Surfaces and Interfaces

Strain at Native ${\rm SiO}_{2}/{\rm Si}(111)$ Interface Characterized by Strain-Scanning Second-Harmonic Generation

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Nanoscale mapping of surface strain in tapered nanorods using confocal photoluminescence spectroscopy

Relationships Between Strain and Band Structure in Si(001) and Si(110) Nanomembranes

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Phonon-limited mobility for electrons and holes in highly-strained silicon

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

Strain-engineered Surface Transport in Si(001): Complete Isolation of the Surface State Via Tensile Strain.

Strain engineering of the electronic states of silicon-based quantum emitters

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Probing lattice vibration at surface and interface of SiO$_2$/Si with nanometer resolution.

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Texture-Induced Strain in a WS2 Single Layer to Monitor Spin-Valley Polarization