Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

High Ferromagnetic Transition Temperature (172K) in Mn delta-doped GaAs with p-type Selective Doping

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Raising TC of Ferromagnetic Semiconductors Through Doping Control: the Case of GaMnAs

The Langevin Equation for a Quantum Heat Bath

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Resistivity Minima and Kondo Effect in Ferromagnetic Gamnas Films

Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Room Temperature Ferromagnetism of Gan : Mn Thin Films Grown by Low Pressure Metal-Organic Chemical Vapor Deposition by Mn Periodic Delta-Doping

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Fabrication of Ferromagnetic (ga,mn)as by Ion Irradiation

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Effect of Annealing on Magnetic Properties of New (in,al,mn)as Ferromagnetic Semiconductors

Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

Above-room-temperature ferromagnetism in GaSb/Mn digital alloys