High Ferromagnetic Transition Temperature (172K) in Mn delta-doped GaAs with p-type Selective Doping

Ahsan M. Nazmul,S. Sugahara,M. Tanaka

DOI: https://doi.org/10.1103/PhysRevB.67.241308

2002-08-15

Abstract:We have found high ferromagnetic transition temperature in Mn delta-doped GaAs-based heterostructures grown on GaAs(001) substrates by molecular beam epitaxy. A 0.3 ML Mn d-doped GaAs samples showed high resistivity at low temperature and did not show a ferromagnetic behavior. However, in a selectively doped heterostructure (Mn delta-doped GaAs / Be-doped AlGaAs), where holes were supplied from the Be-doped AlGaAs layer, clear ferromagnetic order was observed. The ferromagnetic transition temperature of the selectively doped heterostructure was as high as 172K with suitable low-temperature (LT) annealing treatment.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to increase the ferromagnetic transition temperature (Curie temperature, \(T_C\)) in Mn δ -doped GaAs - based heterostructures. Specifically, the researchers introduced p - type selective doping technology, that is, introducing Be - doped AlGaAs layers in Mn δ -doped GaAs layers to provide holes, thereby achieving a higher ferromagnetic transition temperature.

### Main problems and solutions:

1. **Background problems**:
- Although traditional III - V group semiconductor - based magnetic materials (such as (GaMn)As) have been widely studied, their ferromagnetic transition temperatures are low, usually not exceeding 110K.
- The Mn δ -doped GaAs layer itself exhibits high resistivity at low temperatures and does not show ferromagnetic behavior.

2. **Proposed new method**:
- The researchers designed a new type of heterostructure: Mn δ -doped GaAs / Be - doped AlGaAs. In this structure, holes are transferred from the Be - doped AlGaAs layer to the Mn δ -doped GaAs layer.
- Through this selective doping technology, the researchers successfully achieved clear ferromagnetic order and significantly increased the ferromagnetic transition temperature.

3. **Experimental results**:
- In the optimized samples, through low - temperature annealing treatment, the ferromagnetic transition temperature reached 172K, which is one of the highest ferromagnetic transition temperatures reported so far in III - V group - based magnetic semiconductors.

### Key innovation points:

- **Local high - concentration doping**: Through the δ - doping technology, local high - concentration Mn doping is achieved while maintaining good crystal quality.
- **Selective doping**: The holes provided by the Be - doped AlGaAs layer are used to enhance the ferromagnetic order in the Mn δ -doped GaAs layer.
- **Low - temperature growth and annealing**: By reducing the growth temperature and appropriate low - temperature annealing treatment, the ferromagnetic transition temperature is further increased.

### Summary:

This research has successfully increased the ferromagnetic transition temperature of Mn δ -doped GaAs - based heterostructures to 172K through innovative structural design and process optimization, providing new ideas and technical approaches for the development of high - performance spintronic devices.