Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Approaching the Curie temperature of ferromagnetic (Ga,Mn)P prepared by ion implantation and pulsed laser melting

Observation of Room Temperature Ferromagnetism and Exchange Bias in a 55mn+ Ion-Implanted Unintentionally Doped Β-Ga2o

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Mn3Ga, a compensated ferrimagnet with high Curie temperature and low magnetic moment for spin torque transfer applications

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP

Ferromagnetic properties and structure of MnPLU ion-implanted GaAs

Hole Mediated Magnetism In Mn-Doped Gan Nanowires

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Ferromagnetism of Mn-doped GaN polycrystalline powders

Ferromagnetism in Mn and Cr Doped Gan by Thermal Diffusion

Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization

High Ferromagnetic Transition Temperature (172K) in Mn delta-doped GaAs with p-type Selective Doping

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties