Abstract:Mn/C-codoped GaN nanostructures were synthesized by carbothermal nitridation with active charcoal as the carbon source. Nanostructures such as zigzag nanowires and nanoscrews were observed by varying the reaction time and the C/Ga molar ratio of the starting material used for the synthesis. The structures and morphologies of the as-grown samples were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy measurements. The doping of both Mn and C in the GaN matrix was confirmed by X-ray photoelectron spectroscopy measurements, and the ferromagnetic properties of Mn/C-codoped GaN samples were confirmed by room-temperature magnetization measurements. The saturation magnetization of Mn/C-codoped GaN increases steadily with increasing C/Ga molar ratio of the starting material at a rate of similar to 0.023 emu/g per C/Ga molar ratio, and the ferromagnetism of Mn/C-codoped GaN can be stronger than that of Mn-doped GaN by a factor of similar to 40. A plausible growth mechanism was proposed, and the role of carbon codoping in tuning the morphology and ferromagnetic property was discussed. Our work suggests that carbon doping in the GaN matrix favors the N sites over the Ga sites, Mn/C-codoping in the GaN matrix is energetically favorable, and the C-codoping strongly enhances the preference of the FM coupling to the AFM coupling between the two doped Mn sites. These suggestions were probed on the basis of first-principles density functional theory electronic structure calculations for a number of model doped structures constructed with a 32-atom 2 x 2 x 2 supercell.

Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

Magnetic and Magneto-Transport Properties of Ga1−xMnxN Grown by MOCVD

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

The Langevin Equation for a Quantum Heat Bath

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

Effects of Nitrogen Vacancies Induced by Mn Doping in (ga,mn)n Films Grown by MOCVD

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Evidence for In-Plane Tetragonal c-axis in Mn$_x$Ga$_{1-x}$ Thin Films using Transmission Electron Microscopy

Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Influence of Mn-Doped Content on Ferromagnetism of Ga 1− X Mn X N Film Grown by LP-MOVPE

High Ferromagnetic Transition Temperature (172K) in Mn delta-doped GaAs with p-type Selective Doping