Abstract:In the early 2000-ies, world leaders in the eld of computer engineering, such companies as IBM, Intel and Samsung Electronics announced the development of a new technology for the production of boards based on multilayer lms HfO2 Al2O3 on a silicon pad using the method of atomic layer deposition. The board has a high dielectric constant value thus making it possible to produce smaller transistors with increased operational speed, to reduce leakage current and electric energy consumption. It has been known that hafnium oxide is used in the production of optical devices, resistors, electronic ceramics, neutron absorption compositions, and catalysts. High purity of material is one of key conditions for its application. As source material, hafnium concentrate was used that was enriched to 10% in the form of K2(ZrHf)F6 salt the product of fractional crystallization of zirconium and hafnium uorides in the production of zirconium for nuclear applications. Another source material is a HFO2 commercial-grade hafnium oxide produced at Vilnogorsk Mining and Smelting Works. Key process stages are fusion with alkali at a temperature of 800 ◦C, dissolution in nitric acid and extraction. The impurities content of resultant hafnium re-extract is 10 5% (mass). The prime objective of the process technology is the preservation of hafnium purity in its oxide production, which is attained by the application of materials and equipment items having a high corrosion resistance, such as stainless steel, crucibles made of high-purity silicon, reaction vessels made of zirconium and uoroplastic. Centrifugal extractors allow the key critical process of hafnium extraction puri cation to be su ciently e ective, resulting in obtaining the product of a required 99.99% purity. Physical properties of hafnium oxide are presented in su cient detail in. Hafnium oxide can by produced using various methods to be selected based on the requirements to product quality, process e ciency and cost considerations.

Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Baking-Temperature-Modulated Optical and Electrical Properties of Hftiox Gate Dielectrics Via Sol-Gel Method

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Phase stability of hafnium oxide and zirconium oxide on silicon substrate

Ferroelectricity in hafnium oxide thin films

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Fabrication and Electrical Characteristics of Ultrathin (Hfo2)(x)(sio2)(1-X) Films by Surface Sol-Gel Method and Reaction-Anneal Treatment

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Hafnium Oxide Layers Derived by Photo-Assisted Sol–gel Processing

Hafnium Oxide as Efficient Material for a New Generation Dielectric