Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction

H. T. Johnson-Steigelman,A. V. Brinck,P. F. Lyman

DOI: https://doi.org/10.48550/arXiv.cond-mat/0202328

2002-02-20

Abstract:The formation of hafnium silicate films (HfSixOy) for use as gate oxides with large dielectric constant by solid state reaction of Hf metal and SiO2 was investigated. Thin, fully reacted silicate films could be formed, and were thermally stable in vacuum to temperatures in excess of 800 C. The interface between a hafnium silicate layer and the silicon substrate was shown to be stable against SiO2 formation. The results suggest a new processing route for production of a gate insulator having low equivalent oxide thickness.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: With the continuous miniaturization of circuit elements in ultra - large - scale integrated circuits (ULSI), the thickness of the traditional silicon dioxide (SiO₂) gate oxide layer has approached its physical limit, resulting in a significant increase in the electron tunneling effect and thus an unacceptable current leakage. To solve this problem, researchers are looking for materials with a higher dielectric constant (κ) as the gate oxide layer to increase the physical thickness while maintaining the same capacitance, thereby reducing the tunneling effect.

Specifically, this paper explores the possibility of generating hafnium silicate (HfSixOy) thin films as gate oxide layers through solid - state reactions. This material is expected to be a "high - κ" insulator, which can effectively reduce the tunneling current without degrading device performance, meeting the requirements of high - performance and low - power applications. In addition, the research also focuses on the interface stability between hafnium silicate and the silicon substrate, ensuring that no unfavorable intermediate silicon dioxide (SiO₂) layer is formed.

### Main research contents include:
1. **Material selection**: Hafnium (Hf) metal and silicon dioxide (SiO₂) were selected as reactants because hafnium oxides and silicates have a relatively high dielectric constant and exhibit good thermal stability when in contact with the silicon substrate at high temperatures.
2. **Experimental method**: Hafnium silicate thin films were generated through solid - state reactions, and the films were characterized by techniques such as X - ray photoelectron spectroscopy (XPS) and low - energy electron diffraction (LEED).
3. **Result analysis**:
- Fully reacted, amorphous hafnium silicate thin films were successfully prepared.
- These films can be stable in a vacuum environment up to above 800°C.
- Research shows that the interface between hafnium silicate and the silicon substrate is stable and no unfavorable intermediate SiO₂ layer will be formed.
4. **Potential advantages**:
- By generating hafnium silicate thin films through solid - state reactions, a high - quality SiO₂ - Si interface can be retained, avoiding the pollution problems caused by direct deposition.
- This method may be applicable to chemical vapor deposition (CVD) technology, further simplifying the process flow.

### Conclusion:
The hafnium silicate thin films generated through solid - state reactions exhibit good thermal stability and interface stability at high temperatures and are a potential high - κ gate oxide layer material, which helps to solve the problems brought about by the thickness limitation of the traditional SiO₂ gate oxide layer.