Abstract:The magnetic field sensor based on tunnel magnetoresistance (TMR) effect has potential applications in various fields due to its very high field sensitivity and low power comsuption. However, the resolution of magnetic sensor depends on not only field sensitivity, but also intrinsic noise level. The intrinsic noise of an electronic device is normally frequency-dependent and increases in low frequency range. In a magnetic tunneling system, thermal magnetization fluctuation in the magnetic layer can couple to the resistance through the spin-dependent tunneling effect and create low-frequency magnetic noise. In addition, the charge trapping effect in the oxide barrier may also contribute to the external low-frequency noise. Therefore, the depression of the noise in TMR magnetic field sensor, especially the low-frequency noise, is extremely important for the application with high resolution requirement. In this work, a low-frequency noise measurement system for TMR magnetic sensor is built by using a highaccuracy data acquisition card and a low noise preamplifier. After subtracting the circuit noise from the measured noise, the noise spectral patterns of TMR magnetic field sensor with a full Wheatstone bridge structure are obtained under various bias currents and external magnetic fields. It is found that the noise spectra of the TMR sensor exhibit a clear 1/f character in the low frequency region and the noise power spectral intensity is proportional to the square of the bias current. By fitting the power spectral density of the noise versus frequency in the TMR sensor, the Hooge parameters are obtained, which remain unchanged in the measurement. The noise intensity increases abruptly in the magnetization switching region of the free layer in magnetic tunnel junction, suggesting that the 1/f noise mostly comes from the magnetic noise. In a magnetic hysteresis loop, this noise power is strongly field-dependent, which is due to thermal magnetization fluctuations in magnetic layers. We attribute this magnetic fluctuation to thermally excited hopping of the magnetic domain wall between the pinning sites. Finally, according to the R-H transfer curves and the measured noise spectra of the TMR sensor, the detectable minimum magnetic fields of the sensor are 9 nT and 1.3 nT at 100 Hz and 4 kHz with 1 V input voltage, respectively. These results pave a way for optimizing the noise properties of TMR magnetic sensors.

Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature

Improvement of the Low-Frequency Sensitivity of Mgo-Based Magnetic Tunnel Junctions by Annealing

Temperature Dependence of the Off‐diagonal Magnetoimpedance in Sensor Configuration Utilizing Co‐rich Amorphous Wires

Geometrical Dependence of Thermally Excited Mag-Noise Spatial Distribution in Magnetic Tunnel Junction Sensors

Edge Effect on Thermally Excited Mag-Noise in Magnetic Tunnel Junction Sensors

Measurement and Study of Low-Frequency Noise in Tmr Magnetic Field Sensor

Detection of Small Magnetic Fields Using Serial Magnetic Tunnel Junctions with Various Geometrical Characteristics

Thermal relaxation rates of magnetic nanoparticles in the presence of magnetic fields and spin-transfer effects

Effect of Annealing on the Magnetic Tunnel Junction with Co/Pt Perpendicular Anisotropy Ferromagnetic Multilayers

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Discussion on the Relationship Between Sensor Noise and Glass-Covered Amorphous Magnetic Wires Annealing Temperature

Non-orthogonal two-step annealing method for linearized magnetic tunnel junction sensors

Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

Preparation of High Sensitivity and Low Noise Tunnel Junction Magnetoresistive Devices

Magnetic Anisotropy Instability Due to Magnetic Field Annealing in Ta/MgO/NiFe/MgO/Ta Anisotropic Magnetoresistive Sensors

Micromagnetic Simulation For Tunnel Junctions With Synthetic Antiferromagnetic Pinned Layers Annealed At Different External Fields

Microstructure of Annealed Magnetic Tunnel Junction by Electron Microscopy

Noise Suppression And Sensitivity Manipulation Of Magnetic Tunnel Junction Sensors With Soft Magnetic Co70.5fe4.5si15b10 Layer

Equivalent Noise Analysis and Modeling for a Magnetic Tunnel Junction Magnetometer with in Situ Magnetic Feedback

Magnetic Tunneling Junction Based Magnetic Field Sensors: Role of Shape Anisotropy Versus Free Layer Thickness

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment