Abstract:The synergistic effects between total ionizing dose (TID) and transient dose rate (TDR) effects are explored. To implement the analysis, a stable 3D parallel numerical scheme is specially developed. Using the control volume finite element tearing and interconnect (CV-FETI) method, the discontinuous boundary conditions can be included with the usual numerical properties. Newton's method is employed to overcome the nonconvergence brought by the nonlinear property of the drift- diffusion model. Compared to with the commercial COMSOL Multiphysics software, our CV-FETIM shows strong numerical stability on unstructured meshes. The proposed method is validated by comparing the numerical results with those calculated using commercial software. Then, this new solver is applied to simulate MOSFET, STI-based LDMOSFET, and FinFET. By adjusting the dose rate, oxide traps, and interface traps, the independent TID, independent TDR, and TID-TDR synergistic effects are investigated. On picosecond or nanosecond timescales, the duration, amplitude, and decline rate of the radiation-induced photocurrent are studied. Moreover, the influence of interface traps on different surfaces is compared. The numerical results indicated that the developed numerical scheme possesses good stability, accuracy, and applicability.

3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics