Abstract:Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS2) and tungsten disulfide (WS2)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd. Multiphonon Raman spectroscopy properties of graphene (mono‐, bi‐, tri‐ and few‐) layers, and molybdenum disulfide (MoS2), tungsten disulfide (WS2) and hexagonal boron nitride (h‐BN) monolayers revealing various molecular vibrations and structural quality/disorder are reported. Raman spectroscopy and mapping served as a reliable non‐destructive analytical method for several twodimensional (2D) materials and determined an empirical relation between the G band position (∙G) and number of graphene layers (n).

Determining layer number of two-dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Determining layer number of micro-mechanical exfoliated and CVD grown ultrathin graphenes by the methods of Raman intensity ratio

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Rapid Thickness Identification Methodology for Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy

Versatile Optical Determination of Two-Dimensional Atomic Crystal Layers

Thickness Determination of MoS2, MoSe2, WS2 and WSe2 on Transparent Stamps Used for Deterministic Transfer of 2D Materials

Thickness-dependent Dielectric Constant of Few-layer In$_2$Se$_3$ Nano-flakes

Thickness identification of two-dimensional materials by optical imaging.

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Experimental and Computational Investigation of Layer-Dependent Thermal Conductivities and Interfacial Thermal Conductance of One- to Three-Layer WSe 2

Identifying atomically thin crystals with diffusively reflected light

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

Optical identification of atomically thin dichalcogenide crystals

Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer Decoupling and Stability