Abstract:Due to their outstanding properties for optoelectronic and versatile electronic applications, the atomically thin layers of transition-metal dichalcogenide (TMDC) materials have demonstrated a potential candidacy to succeed its analog silicon-based technology. Hence, the elucidation of the most important features of these materials is indispensable. In this study, we provide a theoretical elucidation of the structural, electronic, elastic, and optical characteristics of TMDCs. The study has been carried out by elucidating the material in its two particular forms, namely, bulk and two-dimensional (2D) layered (monolayer). The theoretical investigation was carried out within the framework of the density functional theory (DFT) method using first-principles calculations. The Perdew-Burke-Ernzerhof (PBE) variant of the generalized gradient approximation (GGA) scheme, as performed in the Quantum Espresso package, is used. Van der Waals density functional effects, involving the nonlocal correlation part from the rVV10 and vdW-DF2 methods, were treated to remedy the lack of the long-range vdW interaction. An illustration of the performance of both rVV10 and vdW-DF2 functionalities, with the popular PBE correlations, is elucidated. The Born stability criterion is employed to assess structural stability. The obtained results reveal an excellent stability of both systems. Furthermore, the theoretical results show that band-gap energy is in excellent agreement with experimental and theoretical data. Pugh's rule suggested that both the bulk and MoS2-2D layered systems are ductile materials. The refractive indices obtained herein are in good agreement with the available theoretical data. Moreover, the theoretical results obtained with the present approach demonstrate the ductility of both systems, namely, the bulk and the MoS2-2D layered. The results obtained herein hold promise for structural, elastic, and optical properties and pave the way for potential applications in electronic and optoelectronic devices.

Thickness Determination of MoS2, MoSe2, WS2 and WSe2 on Transparent Stamps Used for Deterministic Transfer of 2D Materials

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

Rapid Thickness Identification Methodology for Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

Thickness Tunable Wedding-Cake-like MoS2 Flakes for High-Performance Optoelectronics

Assessment of wafer scale MoS2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors

Thickness identification of two-dimensional materials by optical imaging.

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition

Elucidating the Structural, Electronic, Elastic, and Optical Properties of Bulk and Monolayer MoS2 Transition-Metal Dichalcogenides: A DFT Approach

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Thickness-Dependent Photocatalysis of Ultra-Thin MoS2 Film for Visible-Light-Driven CO2 Reduction

Structural Studies of Alloyed and Nanoparticle Transition Metal Dichalcogenides by Selenium-77 Solid-State Nuclear Magnetic Resonance Spectroscopy

Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2

Mechanical frictional scanning probe lithography of TMDCs

Transmission-Matrix Quantitative Phase Profilometry for Accurate and Fast Thickness Mapping of 2D Materials

Thickness dependent friction on few-layer MoS 2 , WS 2 , and WSe 2 .