Abstract:Two-dimensional (2D) layered materials have stimulated extensive research interest for their unique thickness-dependent electronic and optical properties. However, the layer-number-dependent studies on 2D materials to date are largely limited to exfoliated flakes with relatively small lateral size and poor yield. The direct synthesis of 2D materials with a precise control of the number of atomic layers remains a substantial synthetic challenge. Here we report a systematic study of chemical vapor deposition synthesis of large-area atomically thin 2D nickel telluride (NiTe2) single crystals and investigate the thickness dependent electronic properties. By controlling the growth temperature, we show that the highly uniform NiTe2 single crystals can be synthesized with precisely tunable thickness varying from 1, 2, 3, . . . to multilayers with a standard deviation (∼0.3 nm) of less than the thickness of a monolayer layer NiTe2. Our studies further reveal a systematic evolution of single crystal domain size and nucleation density with the largest lateral domain size up to ∼440 μm. X-ray diffraction, transmission electron microscopy, and high resolution scanning transmission electron microscope studies demonstrate that the resulting 2D crystals are high quality single crystals and adopt hexagonal 1T phase. Electrical transport studies reveal that the 2D NiTe2 single crystals show a strong thickness-tunable electrical properties, with an excellent conductivity up to 7.8 × 105 S m-1 and extraordinary breakdown current density up to 4.7 × 107 A/cm2. The systematic study and robust synthesis of NiTe2 nanosheets defines a reliable chemical route to 2D single crystals with precisely tailored thickness and could enable the design of new device architectures based on thickness-tunable electrical properties.

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

Thickness and Stacking Sequence Determination of Exfoliated Dichalcogenides (1T-Tas2, 2H-Mos2) Using Scanning Transmission Electron Microscopy

Direct Visualization of Large‐Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air‐Sensitive Monolayer 1T’‐ WTe 2

Deep Learning Enabled Strain Mapping of Single-Atom Defects in 2D Transition Metal Dichalcogenides with Sub-picometer Precision

Enhancing Charge-Density-Wave Order In 1t-Tise2 Nanosheet By Encapsulation With Hexagonal Boron Nitride

Atomic Resolution Imaging of Highly Air-Sensitive Monolayer and Twisted-Bilayer WTe 2

Anomalous Vibrational Modes in Few Layer Wte2 Revealed by Polarized Raman Scattering and First-Principles Calculations

In-situ scanning tunneling microscopy observation of thickness-dependent air-sensitive layered materials and heterodevices

Synthetic Control of Two-Dimensional NiTe2 Single Crystals with Highly Uniform Thickness Distributions

Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances

Transmission-Matrix Quantitative Phase Profilometry for Accurate and Fast Thickness Mapping of 2D Materials

Machine Learning Driven Synthesis of Few-Layered WTe2 with Geometrical Control

Phase-resolved Terahertz Nanoimaging of WTe2 Microcrystals

Realization of 2/3-layer transition metal dichalcogenides

Probing interlayer shear thermal deformation in atomically-thin van der Waals layered materials

Resolving Deep Quantum-Well States in Atomically Thin 2H-Mote2 Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy

Terahertz Response of Monolayer and Few-Layer WTe_2 at the Nanoscale

Machine Learning Driven Synthesis of Few-Layered WTe<sub>2</sub> with Geometrical Control

Mode-resolved Reciprocal Space Mapping of Electron-Phonon Interaction in the Weyl Semimetal Candidate Td-WTe2

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2

Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning