Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$

Van der Waals Epitaxy of Weyl-Semimetal T d -WTe 2

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants

Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides

Centimeter-Scale, Large-Area, Few-Layer 1T′-Wte2 Films by Chemical Vapor Deposition and Its Long-Term Stability in Ambient Condition

Epitaxial Growth of Single‐Phase 1T'‐WSe 2 Monolayer with Assistance of Enhanced Interface Interaction

Epitaxial Growth of Single‐Phase 1t'‐wse2 Monolayer with Assistance of Enhanced Interface Interaction

Van der Waals epitaxial growth of few layers WSe2 on GaP(111)B

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Metatungstate Chemical Vapor Deposition of WSe2: Substrate Effects, Shapes, and Morphologies

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition

Growth of few-layer WTe2 by a salt-assisted double-tube chemical vapor deposition method with high infrared photosensitivity

Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy

Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T′-Wse 2 Thin Film

First Principles Kinetic Monte Carlo Study on the Growth Patterns of WSe 2 Monolayer

Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides