Abstract:Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of their thickness, or layer number (N). How to determine the N of ultrathin TMD materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify the N of intrinsic and defective multilayer graphenes up to N = 100. However, such analysis is not applicable to ultrathin TMD flakes due to the lack of a unified complex refractive index ( n ˜ ?> ) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO2/Si substrate by the intensity ratio between the Si peak from 100 nm (or 89 nm) SiO2/Si substrates underneath TMD flakes and that from bare SiO2/Si substrates. We assume the real part of n ˜ ?> of TMD flakes as that of monolayer TMD and treat the imaginary part of n ˜ ?> as a fitting parameter to fit the experimental intensity ratio. An empirical n ˜ , ?> namely, n ˜ eff , ?> of ultrathin MoS2, WS2 and WSe2 flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV or 2.09 eV). The fitted n ˜ eff ?> of MoS2 has been used to identify the N of MoS2 flakes deposited on 302 nm SiO2/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique of measuring Raman intensity from the substrate can be extended to identify the N of ultrathin 2D flakes with N-dependent n ˜ . ?> For application purposes, the intensity ratio excited by specific laser excitations has been provided for MoS2, WS2 and WSe2 flakes and multilayer graphene flakes deposited on Si substrates covered by a 80–110 nm or 280–310 nm SiO2 layer.

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy

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Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

Optical thickness identification of transition metal dichalcogenide nanosheets on transparent substrates.

Rapid Thin-Layer WS2 Detection Based on Monochromatic Illumination Photographs

Thickness identification of two-dimensional materials by optical imaging.

Optical image-based thickness characterization of atomically thin nanomaterials using computer vision techniques

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A Facile Method for Precise Layer Number Identification of Two-Dimensional Materials Through Optical Images

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Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

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Layer-number Determination of Two-Dimensional Materials by Optical Characterization

Optical-based thickness measurement of MoO$_3$ nanosheets

A Universal Approach to Determine the Atomic Layer Numbers in Two-Dimensional Materials Using Dark-Field Optical Contrast.

Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS_2 and WS_2 Using Reflection Spectroscopic Fingerprints

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2

The Numerical-Aperture-Dependent Optical Contrast and Thickness Determination of Ultrathin Flakes of Two-Dimensional Atomic Crystals: A Case of Graphene Multilayers

Determining layer number of two-dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates