Abstract:Transition metal dichalcogenides (TMDs) are layered two-dimensional semiconductors explored for various optoelectronic applications, ranging from light-emitting diodes to single-photon emitters. To interact strongly with light, such devices require monolayer TMDs, which exhibit a direct bandgap. These atomically thin sheets are typically obtained through mechanical exfoliation followed by manual identification with a brightfield optical microscope. While this traditional procedure provides high-quality crystals, the identification step is time-intensive, low-throughput, and prone to human error, creating a significant bottleneck for TMD research. Here, we report a simple and fully automated approach for high-throughput identification of TMD monolayers using photoluminescence microscopy. Compared to a manual search and verification, our methodology offers a four-orders-of-magnitude decrease in the time a researcher must invest per identified monolayer. This ability enables us to measure geometric and photoluminescence-intensity features of more than 2,400 monolayers and bilayers of WSe$_2$, MoSe$_2$, and MoS$_2$. Due to these large numbers, we can study and quantify material properties previously inaccessible. For example, we show that the mean photoluminescence intensity from a monolayer correlates with its size due to reduced emission from its edges. Further, we observe large variations in brightness (up to 10$\times$) from WSe$_2$ monolayers of different batches produced by the same supplier. Therefore, our automated approach not only increases fabrication efficiency but also enhances sample quality for optoelectronic devices of atomically thin semiconductors.

Rapid Thickness Identification Methodology for Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy

Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy

Optical thickness identification of transition metal dichalcogenide nanosheets on transparent substrates.

Thickness identification of two-dimensional materials by optical imaging.

Optical-based thickness measurement of MoO$_3$ nanosheets

Optical image-based thickness characterization of atomically thin nanomaterials using computer vision techniques

Rapid Thin-Layer WS2 Detection Based on Monochromatic Illumination Photographs

Determination of the Thickness of Two-Dimensional Transition-Metal Dichalcogenide by the Raman Intensity of the Substrate

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2

Optical Identification of Single‐ and Few‐Layer MoS2 Sheets

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides

Rapidly Counting Atomic Planes of Ultra-Thin MoSe 2 Nanosheets (1 ≤ N ≤ 4) on SiO 2 /si Substrate

Characterization and Layer Thickness Mapping of Two-Dimensional MoS2 Flakes Via Hyperspectral Line-Scanning Microscopy

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

A Facile Method for Precise Layer Number Identification of Two-Dimensional Materials Through Optical Images

Transmission-Matrix Quantitative Phase Profilometry for Accurate and Fast Thickness Mapping of 2D Materials

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Layer-number Determination of Two-Dimensional Materials by Optical Characterization