Abstract:Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems.

Microscopical Quantification of Ion-Induced Nanodefects in Monolayer MoS<sub>2</sub> Based on Differential Reflectance

Defect density quantification in monolayer MoS2 using helium atom micro-diffraction

Machine Learning Analysis of Raman Spectra of MoS2

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Disentangling doping and strain effects at defects of grown MoS2 monolayers with nano-optical spectroscopy

Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS2 Stack

Defect Sizing, Distance and Substrate Effects in Ion-Irradiated Monolayer 2D Materials

Defect Sizing, Separation, and Substrate Effects in Ion-Irradiated Monolayer Two-Dimensional Materials

Reflectance Difference Spectroscopy Microscope for Circular Defects on InN Films

Imaging Vacancy Defects in Single-Layer Chromium Triiodide

Visualization of defect induced in-gap states in monolayer MoS2

Exploring atomic defects in molybdenum disulphide monolayers

Optical detection of strain and doping inhomogenieties in single layer MoS2

Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Identification of Defective Two Dimensional Semiconductors by Multifractal Analysis: The Single-layer ${\rm MoS_2}$ Case Study

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Inspection of Line Defects in Transition Metal Dichalcogenides Using a Microscopic Hyperspectral Imaging Technique.

Visualizing Point Defects in Transition Metal Dichalcogenides Using Optical Microscopy.

Directly Imaging and Regulating the Nanoscale Inhomogeneity of S‐Vacancies in Molybdenum Disulfide Monolayer During Electrocatalytic Hydrogen Evolution

Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs