Abstract:Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems.

Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

Advances in MoS2-Based Field Effect Transistors (FETs)

Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Harnessing Defects for High-Performance MoS2 Tunneling Field-Effect Transistors

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil

Microscopical Quantification of Ion-Induced Nanodefects in Monolayer MoS<sub>2</sub> Based on Differential Reflectance

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs