Abstract:Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems.

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs

Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS2 Channels

Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation

Microscopical Quantification of Ion-Induced Nanodefects in Monolayer MoS<sub>2</sub> Based on Differential Reflectance

Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Visualization of defect induced in-gap states in monolayer MoS2

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel

Identification of Defective Two Dimensional Semiconductors by Multifractal Analysis: The Single-layer ${\rm MoS_2}$ Case Study