Abstract:Molybdenum disulfide (MoS 2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS 2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n-doped MoS 2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS 2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p-type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS 2 SBFETs can further operate in four distinct configurations: p − p, n − n, p − n, and n − p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS2 Channels

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Hysteresis analysis of MoS<sub>2</sub> Field Effect Transistors

A New Method of Studying on the Dynamic Parameters of Bulk Traps in Thin SiO2 Layer of MOS Structures

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels