Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Identification of Defective Two Dimensional Semiconductors by Multifractal Analysis: The Single-layer ${\rm MoS_2}$ Case Study

Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS2 Stack

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Microscopical Quantification of Ion-Induced Nanodefects in Monolayer MoS<sub>2</sub> Based on Differential Reflectance

Optical detection of strain and doping inhomogenieties in single layer MoS2

TEM-processed defect densities in single-layer TMDCs and their substrate-dependent signature in PL and Raman spectroscopy

Disentangling doping and strain effects at defects of grown MoS2 monolayers with nano-optical spectroscopy

Machine Learning Analysis of Raman Spectra of MoS2

Defect MoS Misidentified As MoS2 in Monolayer MoS2 by Scanning Transmission Electron Microscopy: A First-Principles Prediction.

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Multiparameter Admittance Spectroscopy for Investigating Defects in MoS_2 Thin Film MOSFETs

Inspection of Line Defects in Transition Metal Dichalcogenides Using a Microscopic Hyperspectral Imaging Technique.

Visualization of defect induced in-gap states in monolayer MoS2

Single atom chemical identification of TMD defects in ambient conditions

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Localized defect states in MoS$_2$ monolayers: electronic and optical properties

Defect density quantification in monolayer MoS2 using helium atom micro-diffraction

Analysis of Photoluminescence Behavior of High-Quality Single-Layer MoS2

Electronic Properties of Defective Janus MoSSe Monolayer