Abstract:Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.

Determining layer number of micro-mechanical exfoliated and CVD grown ultrathin graphenes by the methods of Raman intensity ratio

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Rapid determination of the thickness of graphene using the ratio of color difference

Spectroscopic Metrics Allow in Situ Measurement of Mean Size and Thickness of Liquid-Exfoliated Few-Layer Graphene Nanosheets

Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene

Identifying the Stacking Order of Multilayer Graphene Grown by Chemical Vapor Deposition Via Raman Spectroscopy

Optical Transmittance of Multilayer Graphene

Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy.

Determination of the Optical Index for Few-Layer Graphene by Reflectivity Spectroscopy

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers

Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity

Nondestructive Andin Situdetermination of Graphene Layers Using Optical Fiber Fabry–Perot Interference

Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Optical Methods for Determining Thicknesses of Few-Layer Graphene Flakes

Determination of the elastic moduli of CVD graphene by probing graphene/polymer Bragg stacks

Thickness identification of two-dimensional materials by optical imaging.

Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates

Total Color Difference for Rapid and Accurate Identification of Graphene

Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies