Abstract:Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.

Optical identification of atomically thin dichalcogenide crystals

Identifying atomically thin crystals with diffusively reflected light

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

Measuring the Refractive Index of Highly Crystalline Monolayer Mos2 with High Confidence

Optical-based thickness measurement of MoO$_3$ nanosheets

Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers

Optical thickness determination of hexagonal boron nitride flakes

Thickness Identification of 2D Hexagonal Boron Nitride Thin Flakes by Optical Imaging in Dry Transfer Method

Thickness identification of thin InSe by optical microscopy methods

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Rapid Thickness Identification Methodology For Two-Dimensional MoS<sub>2</sub> and In<sub>2</sub>Se<sub>3</sub> Nanosheets Using Optical Microscopy

Optical determination of crystal phase in semiconductor nanocrystals

Versatile Optical Determination of Two-Dimensional Atomic Crystal Layers

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Near-field refractometry of van der Waals crystals

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Giant optical anisotropy of WS2 flakes in the visible region characterized by Au substrate assisted near-field optical microscopy