Abstract:Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded phase-change memory applications, conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures ( T x ). Although doping with additional alloying elements could improve the amorphous stability, it also increases the tendency towards compositional partitioning and phase separation. Recently, a two-dimensional (2D) layered compound CrGeTe 3 (CrGT) was developed as a PCM, showing a high T x ~ 276 °C with an inverse change in resistive-switching character upon phase transition. Here, we report a high-throughput materials screening for 2D layered phase-change chalcogenides. We aim to clarify whether the high T x and the inverse electrical resistance contrast are intrinsic features of 2D PCMs. In total, twenty-five 2D chalcogenides with CrGT trilayer structures have been identified from a large database. We then focused on selected layered tellurides by performing thorough ab initio simulations and experimental investigations and confirming that their amorphous phase indeed has a much higher T x than conventional PCMs. We attribute this enhanced amorphous stability to the structurally complex nuclei required to render crystallization possible. Overall, we regard InGeTe 3 as a balanced 2D PCM with both high thermal stability and large electrical contrast for embedded memory applications.

Structure Effect of Cylindrical-Shaped GeSbTe Alloy on Phase Transition in Phase Change Memory

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Ab initio molecular dynamics and materials design for embedded phase-change memory

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

The origin of hexagonal phase and its evolution process in Ge 2 Sb 2 Te 5 alloy

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays