Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Electronic structure dependence on the density, size and shape of Ge/Si quantum dots array

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Three-dimensional Si/Ge quantum dot crystals

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Modelling of Quantum Dots with the Finite Element Method

Size dependent electronic properties of silicon quantum dots - an analysis with hybrid, screened hybrid and local density functional theory

Valence Energy Level Structure Of Si1-Xgex/Si Quantum Disk

Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot

Optical properties of Ge/Si quantum dot superlattices

Structural, electronic and optical properties of tetrahedral $Si_xGe_{47-x}:H_{60}$ nanocrystals: A Density Functional study

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Electronic and spectral properties of Ge1-xSnx quantum dots: an atomistic study

Electronic Correlations in Multielectron Silicon Quantum Dots

VALENCE ENERGY LEVEL STRUCTURE OF <font>Si</font><sub>1-x</sub><font>Ge</font><sub>x</sub>/<font>Si</font> QUANTUM DISK

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

The elastic relaxation energy and equilibrium aspect ratio of self-organized pyramidal quantum dot