In Situ Epitaxial MgB2 Thin Films for Superconducting Electronics
Xianghui Zeng,Alexej V. Pogrebnyakov,Armen Kotcharov,James E. Jones,X. X. Xi,Eric M. Lysczek,Joan M. Redwing,Shengyong Xu,Qi Li,James Lettieri,Darrell G. Schlom,Wei Tian,Xiaoqing Pan,Zi-Kui Liu
DOI: https://doi.org/10.1038/nmat703
IF: 4.0991
2002-01-01
Microscopy and Microanalysis
Abstract:The newly discovered 39-K superconductor MgB 2 1 holds great promise for superconducting electronics. Like the conventional superconductor Nb, MgB 2 is a phonon-mediated superconductor 2 , with a relatively long coherence length 3 . These properties make the prospect of fabricating reproducible uniform Josephson junctions, the fundamental element of superconducting circuits, much more favourable for MgB 2 than for high-temperature superconductors. The higher transition temperature and larger energy gap 4 , 5 of MgB 2 promise higher operating temperatures and potentially higher speeds than Nb-based integrated circuits. However, success in MgB 2 Josephson junctions has been limited because of the lack of an adequate thin-film technology 6 , 7 . Because a superconducting integrated circuit uses a multilayer of superconducting, insulating and resistive films, an in situ process in which MgB 2 is formed directly on the substrate is desirable. Here we show that this can be achieved by hybrid physical–chemical vapour deposition. The epitaxially grown MgB 2 films show a high transition temperature and low resistivity, comparable to the best bulk samples, and their surfaces are smooth. This advance removes a major barrier for superconducting electronics using MgB 2 .