SUPERCONDUCTING MgB2 FILMS VIA EX-SITU ANNEALING UNDER DIFFERENT Ar PRESSURE PREPARED BY E-BEAM EVAPORATION

Ke Wu,Zeng-Qiang Yu,Jie-Dong ZHang,SHou-ZHeng Wang,Rui-Juan Nie,Fu-Ren Wang
DOI: https://doi.org/10.3969/j.issn.1000-3258.2006.03.003
2006-01-01
Abstract:To fabricate high quality MgB_2 thin films is fundamental for further applications of superconducting devices. With boron films and Mg/B multilayer prepared by E-beam evaporation as the precursors, we succeeded in growing MgB_2 films through the post-annealing method. Adjusting the argon pressure during the annealing process, the transition temperature of annealed B films exceeds 38K with a transition width about 0.3K. Though the T_c of annealed Mg/B multilayer is depressed slightly (~35K), the films’ surface is more uniform and there is no pollution problem of Mg vapor. Significantly different effects of annealing pressure have been observed in these two approaches, we believed these are associated with their different phase formation processes. Some analyses have been proposed to explain the phenomenon, and these will provide a picture for further study of film growing mechanism during the annealing process.
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