Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium

M. Reiners,Ke Xu,N. Aslam,A. Devi,R. Waser,S. Hoffmann‐Eifert
DOI: https://doi.org/10.1021/CM303703R
2013-07-31
Abstract:We studied the growth of TiO2 by liquid injection atomic layer deposition (ALD) utilizing two different amide-based titanium sources, tetrakis-dimethylamido-titanium [(NMe2)4-Ti, TDMAT] and its recently developed derivative, tris-(dimethylamido)-mono-(N,N′-diisopropyl-dimethyl-amido-guanidinato)-titanium {[(N-iPr)2NMe2]Ti(NMe2)3, TiA3G1}, with water vapor as counterreactant. A clear saturation of growth with an increasing precursor supply was found for TDMAT between 150 and 300 °C and for TiA3G1 between 150 and 330 °C. Representative growth per cycle (GPC) values at 250 °C were 0.041 and 0.044 nm/cycle, respectively. Compared to that of TDMAT, ALD of TiA3G1 exhibited a significantly higher stability in the GPC values up to 300 °C coinciding with an improved temperature stability of the precursor. Both processes showed a minimum of the growth rate as a function of temperature. In all cases, the residual carbon and nitrogen contents of the TiO2 films were <3 atom %. Conformal growth was demonstrated on thre...
Materials Science
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