Abstract:Uniformity consideration in integrated-circuit manufacturing is an impressive task, especially in the field of nano-node semiconductors. The use of high-dielectric-constant (high-K) materials to promote drive current in deep nano-node devices is also increasing. One solution involves enhancing the quality of the high-K dielectric layer as a gate dielectric with nitridation treatment. This study combines the aforementioned concerns in deep nano-node manufacturing and demonstrates their relationship. Given the electrical measurement of the wafers treated with decoupled plasma nitridation (DPN), a few desired key parameters, including drive current (IDS), threshold voltage (Vth), gate oxide capacitance per area (Cox), subthreshold swing (SS), and interface state density, in the design of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) are observed. A uniformity comparison with different DPN processes is also performed, and the uniformity of the gate dielectric in input/output and core zones is discussed. Based on the uniformity distribution, lower SS values are obtained by adopting the low-temperature nitridation treatment after high-K dielectric deposition. The increased nitrogen concentration decreases the deviation, thereby indicating improved uniformity of SS values.

Decoupled Plasma Nitridation (DPN) and Postnitridation Annealing (PNA) Treatment for Metal Boundary Effect Reduction

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

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High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Impact of Post-Nitridation Annealing on Ultra-Thin Gate Oxide Performance

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Significant Lifetime Improvement of Negative Bias Thermal Instability by Plasma Enhanced Atomic Layer Deposition SiN in Stress Memorization Technique

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Study on NBTI improvement of HfO<inf>2</inf>-based 14 nm P-type FinFET with post high-k deposition thermal treatment

Surface Passivation of the Ge Substrate by Novel Nitrogen Plasma Immersion Treatment

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance