Abstract:The quality of the absorber layer is considerably important in thin-film solar cells. The precursor stacking with uniform distribution of metal elements is usually considered to be critical while preparing high-quality kesterite-structured thin-film solar cells. However, the Mo/Zn/Cu/Sn/Cu stacking order may be more reasonable after considering the growth mechanism of films. Herein, the growth mechanism and thus the solar cells prepared with these two stacking sequences Mo/Zn/Cu/Sn/Cu and Mo/Sn/Cu/Zn/Sn/Cu are studied in-depth. The cross-sectional images reveal that the Cu2ZnSnSe4 (CZTSe) film prepared with the precursor stacking order of Mo/Zn/Cu/Sn/Cu shows large grains without nanoscale small grains at the bottom of the film, which is attributed to a top-to-bottom growth mechanism. However, the CZTSe film prepared with the precursor stacking order Mo/Sn/Cu/Zn/Sn/Cu has a bilayer structure. The crystallization of CZTSe at the top of the film is good, but its crystallization at the bottom of the film is poor because the SnSe2 liquid phase that assists the growth of CZTSe grains is absent in the bottom layer. The difference in nanoscale morphology and the growth mechanism of CZTSe films is mainly due to the difference in the locations of Zn layers in the precursor films. Therefore, the best CZTSe solar cells have been fabricated with the selenized Mo/Zn/Cu/Sn/Cu films and exhibit an efficiency of 10.28%. Further development of a high-quality kesterite-structured thin film is expected based on the growth mechanism studied herein.

Optimum precursor stacking sequence of Cu2ZnSnSe4 thin film solar cell in selenium atmosphere

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Preparing Cu2ZnSnSe4 thin film solar cells based on selenium containing precursors

Enhanced solar cell performance of Cu 2 ZnSnSe 4 thin films through structural control by using selenide stacked nanolayers in a non-toxic selenium atmosphere

Uniform monolayer Cu2ZnSn(S,Se)4 film based on novel precursor solution

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Growth Mechanism and Properties of Nanostructure Cu 2 ZnSnSe 4 Thin Films and Solar Cells

Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor

Cu 2 ZnSnS 4−x Se x solar cells fabricated with precursor stacked layer ZnS/Cu/SnS by a CBD method

Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Optimized grain growth for efficient solution-processed Bi-doped Cu2ZnSn(S,Se)4 thin film solar cells via spin-coated layers adjustment and two-step selenization

Realization of 11.5% Efficiency Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

A Precursor Stacking Strategy to Boost Open-Circuit Voltage of Cu 2 ZnSnS 4 Thin-Film Solar Cells

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon