Abstract:The Cu2ZnSnSe4 (CZTSe) absorber layer is typically prepared by post-selenization with a metal precursor. In the process of selenization, the loss of SnSex is a common phenomenon, resulting in both an atomic- ratio change and double-layer distribution of the absorber layer. This change affects the film properties. Additionally, excessive deviation from stoichiometry causes the formation of secondary-phase compounds. Moreover, the double-layer distribution reduces the carrier transport between the Mo back electrode and the CZTSe absorber film, inhibiting the effectiveness of the CZTSe solar cell. To address these problems, this study used CuxSe and ZnxSn1−x targets as the sputtering target materials to reduce the loss of SnSex during the selenization of precursor films. In addition, the effect of heating rate on the atomic ratio of the absorber layer was explored by adjusting the heating rate, which is one of the selenization parameters. The results showed that faster heating rates reduced the loss of SnSex, adjusted the Zn/Sn ratio in the absorber layer, and decreased ZnSe-related defects. In this way, the double-layer distribution was improved, air holes were reduced, and crystal structure characteristics of the films were enhanced. Photoluminescence (PL) spectroscopy showed that the signal of the ZnSe-related defect decreased, and the band tail effect became insignificant. The CZTSe absorber layer fabricated under different heating rates is used to prepare the CZTSe solar cell with a photoelectric conversion efficiency ranging from 0.51% to 5.6%.

All-Vacuum-Deposited Bifacial Cu2ZnSnSe4 Photovoltaic Cells with Sputtered Cd-Free Buffer Layer

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells

Exploring New Cadmium Salts to Enhance the Photovoltaic Conversion Efficiency of Cu 2 ZnSn(S,Se) 4 Solar Cells

Realizing zinc-doping of CdS buffer layer via partial electrolyte treatment to improve the efficiency of Cu2ZnSnS4 solar cells

All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%

Numerical Simulations on CZTSSe-Based Solar Cells with GaSe as an Alternative Buffer Layer Using SCAPS-1D

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Suppressing the formation of double‐layer in Cu 2 ZnSnSe 4 ( CZTSe ) absorber layer by facile heating process through nontoxic selenium atmosphere

Improvement of Power Conversion Efficiency of Cu <sub>2</sub>znsn(s,se) <sub>4</sub> Solar Cells by Al Doped CdS

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor

Optimum precursor stacking sequence of Cu2ZnSnSe4 thin film solar cell in selenium atmosphere

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Thermal evaporation–deposited hexagonal CdS buffer layer with improved quality, enlarged band gap, and reduced band gap offset to boost performance of Sb2(S,Se)3 solar cells

Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution

Enhancement of power conversion efficiency of Ag-substituted Cu2ZnSn(S,Se)4 solar cells via tuning Cu2+/(Cu++Cu2+) percentage in precursor solution

Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

Suppression of SnS2 Secondary Phase on Cu2ZnSnS4 Solar Cells Using Multi-Metallic Stacked Nanolayers