Thermoelectric potential: role of bismuth in CuSb1−xBixSe2 for improved transport properties

RO. MU. Jauhar,A. Raja,R. Rajkumar,A. Arulraj,Abdulrahman I. Almansour,S. Deepapriya,Paavai. Era,M. Senthilpandian,Tholkappiyan Ramachandran,R. V. Mangalaraja,V. Siva
DOI: https://doi.org/10.1007/s10854-024-12966-x
2024-06-23
Journal of Materials Science Materials in Electronics
Abstract:The bismuth (Bi)-substituted CuSb 1-x Bi x Se 2 chalcostibites were synthesized using the horizontal Bridgman-Stockbarger technique combined with ball milling, at temperatures ranging from 303 to 650 K. The impact of Bi substitution was observed in the thermoelectric transport properties by substituting Bi ( x = 0, 0.2, 0.4, 0.6) resulted in a decreased Seebeck coefficient and higher electrical resistivity compared to the pure CuSbSe 2 sample. Notably, the higher substitution level ( x = 0.6) showed the enhanced properties compared to the lower levels. The pristine sample exhibited a power factor of 550 μWK −2 m −1 , while the substituted samples showed the values of 20, 37 and 50 μWK −2 m −1 , respectively. However, in accordance with the power factor, the pristine compound demonstrated a higher figure of merit ( ZT = 0.47) compared to the existing literature values ( ZT = 0.21), indicating the superior thermoelectric performance using this synthesis method.
materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
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