Abstract:The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown on Si by metalorganic chemical vapor deposition, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded to Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found to be significantly tuned by appropriate thermal annealing. With increasing annealing temperature, the amorphous interlayer formed at the as-bonded interface gradually transforms into a thin crystallized interlayer without any observable defects even after annealing at 1000 °C, while the interlayer stresses at both GaN layer and Si monotonically change due to the interfacial re-crystallization. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces and brings great promises for wafer-scale low-cost fabrication of GaN electronics.

Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air

Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

Room Temperature Bonding of Si and Si Wafers by Using Mo/Au Nano-Adhesion Layers

Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer

Room temperature bonding of diamond/Si with Mo/Au interlayers in atmospheric air

Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer

Influence of Post-Bonding Annealing Treatment on Interface Characteristics of Si-Si Wafer Bonded Via Room Temperature Surface Activation

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Room-temperature Si-SiN Wafer Bonding by Nano-Adhesion Layer Method

Evaluation of Au/a-Si eutectic wafer level bonding process

Room-temperature Si-Si and Si-SiN wafer bonding

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Nanoscopic Characterization and Mechanism Analysis of LiTaO3/Si Interfaces Prepared by Mo/Au Nanoadhesive Layers for Applications in LiTaO3-Based Devices

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga 2 O 3 (001) substrates

Silicon Wafer Bonding by Modified Surface Activated Bonding Methods

Si Nanoadhesion Layer for Enhanced SiO2–SiN Wafer Bonding

Wafer Bonding Technique Used for the Integration of Cubic Gan/Gaas (001) with Si Substrate

Direct wafer bonding of Ga2O3–SiC at room temperature

Direct bonding of n-GaAs and p-GaN wafers

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer