Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS 2 Transistors for Active Control of Extendable Logic

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure.

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Multifunctional Mixed‐Dimensional MoS2–CuO Junction Field‐Effect Transistor for Logic Operation and Phototransistor

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Multichannel Carbon-Nanotube FETs and Complementary Logic Gates With Nanowelded Contacts

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene Van Der Waals Heterostructures.

High-current MoS2 Transistors with Non-Planar Gate Configuration.

A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si Nanowire

High-Current Omega-Shaped Gated MoS₂ Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application