Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

Research progress on core-shell nanowire FETs

Three-dimensional Modeling of Core-structured Field Effect Transistor

Wire-Based Core Field Effect Transistor (Corefet)

Carbon Nanotube Materials for Future Integrated Circuit Applications

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Study on Transport Characteristics of Silicon-Germanium Nanowire Mosfets with Core-Shell Structure

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

An oxide/silicon core/shell nanowire FET

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

An Oxide/silicon Core/shell Nanowire Metal-Oxide Semiconductor Field-Effect Transistor

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS 2 Transistors for Active Control of Extendable Logic

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Semiconductor Nanowire MOSFETs and Applications

Improving Electrical Performance in Ge–Si Core–shell Nanowire Transistor with a New Stripped Structure

Numerical analysis on core-shell based GeSi nanowire MOSFETs

Compact model and projection of silicon nanowire tunneling transistors (NW-tFETs)

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design