Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

An oxide/silicon core/shell nanowire FET

An Oxide/silicon Core/shell Nanowire Metal-Oxide Semiconductor Field-Effect Transistor

Research progress on core-shell nanowire FETs

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Semiconductor Nanowire MOSFETs and Applications

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Enhancement-Mode Nanowire (nanobelt) Field-Effect-Transistors with Schottky-Contact Source and Drain Electrodes

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

High performance tunnel field-effect transistor by gate and source engineering.

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

Si Nanowire - Array Source Gated Transistors

A nanogapped hysteresis-free field-effect transistor