Abstract:The first-generation semiconductor materials represented by silicon (Si) and germanium (Ge) still hold a dominant position in many fields, including micro-electromechanical systems (MEMS) and integrated circuits (ICs). The processing of these materials continues to attract significant research attention for improvements in quality and efficiency. This study proposes a novel hybrid laser-enhanced particle-laden electrochemical machining (LEPL-ECM) process, whereby pulsed laser irradiation is utilized to selectively and locally enhance the electrical conductivity of Ge at specific locations. A neutral electrolyte jet, containing abrasive diamond particles, is applied to the location on the wafer surface opposite the laser irradiation, facilitating a localized and enhanced electrochemical dissolution. The effect of micro-particle erosion effectively removes the generated oxides and potential passivation layers, ensuring continuous and efficient electrochemical reactions. Consequently, high-quality micro-dimples with an entrance diameter of about 380-800 μm, a depth of around 138-300 μm, and a quasi-mirror surface with the roughness (Sa) of as low as 59.8 nm can be achieved within 90 seconds. Furthermore, the effects of the applied voltage, laser power and processing time on the resulting dimple characteristics and surface quality are discussed, along with a detailed morphology characterization. Dense micro-pits, radial streamlined micro-grooves and a special transitional region have been observed on dimple center, sidewall and near the edge, respectively, and the formation mechanism have been analyzed. Finally, a simulation of the electrolyte jet induced fluid pressure and velocity as well as the particle trajectory and distributions within and surrounding the dimple structure was conducted, which reveals that the synergistic mechanism associated with the hybrid material removal process involves both electrochemical corrosion and abrasive erosion.

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Low-threshold InGaAsP Laser with Etched Facets by Inductively Coupled Plasma

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Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

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Characterization of artificial indentation defects in fused silica surface and its damage performance under 355 nm nanosecond laser

Cleaved Laser Facets on Free‐standing InGaN LD Membrane Created by Laser Lift‐off and Structural Characterisation of the Membrane

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Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

1.3 Μm Laterally-Coupled Distributed Feedback Laser with a Triangular Prism Etched Facet

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Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

Precise and Smooth Structure on Inp Fabricated by Femtosecond Laser Direct Writing-Assisted Wet Etching

Effects of mask characteristics on InP etched- facets by using inductively coupled plasma dry etching

Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

Characterization of manufacturing-induced surface scratches and their effect on laser damage resistance performance of diamond fly-cut KDP crystal

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Mechanisms and characterization of a novel hybrid laser-enhanced particle laden electrochemical fabrication process for high quality micro-dimples on germanium wafers