Abstract:Barrier height and Ideality factor of Ni/n-GaN Schottky diodes are measured by performing temperature dependent current-voltage measurements. The measured value of barrier height is found to be much smaller than the theoretically calculated Schottky-Mott barrier height for the Ni/n-GaN diodes. Furthermore, a high value of ideality factor (>2) is measured at low temperatures. In order to understand these results, we need to consider a double Gaussian distribution of barrier height where the two components are related to the thermionic emission and thermionic filed emission mediated by dislocation-assisted tunnelling of carriers across the Schottky barrier. Thermionic emission is seen to dominate at temperatures higher than 170 K while the dislocation-assisted tunnelling dominates at low temperatures. The value of characteristic tunnelling energy measured from the forward bias current-voltage curves also confirms the dominance of dislocation-assisted tunnelling at low temperatures which is strongly corroborated by the Hall measurements. However, the value of characteristic tunnelling energy for high temperature range cannot be supported by the Hall results. This discrepancy can be eliminated by invoking a two layer model to analyse the Hall data which confirms that the charged dislocations, which reach the sample surface from the layer-substrate interface, provide an alternate path for the transport of carriers. The dislocation-assisted tunnelling of carriers governs the values of Schottky diode parameters at low temperature and the same is responsible for the observed inhomogeneity in the values of barrier height. The present analysis is applicable wherever the charge transport characteristics are severely affected by the presence of a degenerate layer at GaN-Sapphire interface and dislocations lines pierce the Schottky junction to facilitate the tunnelling of carriers.

Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga-target

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Residual Donors and Compensation in Metalorganic Chemical Vapor Deposition As-Grown N-Gan

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Gallium nitride deposition via magnetron sputtering: Linking plasma-surface interactions and thin film crystalline features

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

Ballistic Thermal Transport at Sub-10 nm Laser-Induced Hot Spots in GaN Crystal

Donor and Acceptor Characteristics of Native Point Defects in GaN

Conductive n-type gallium nitride thin films prepared by sputter deposition

Mobility Limiting Scattering Mechanisms in Nitride-Based Two-Dimensional Heterostructures with the Ingan Channel

Formation Mechanism of a Degenerate Thin Layer at the Interface of a GaN/sapphire System

Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN