Abstract:The research is described on wet chemical etching to texturize as‐cut boron doped p‐type mc‐Si wafers in this study. Here, the mc‐Si wafer chemical etching uses a wet chemical etchant (HF+HNO3+CH3COOH ) at ambient temperature. The timeframe of the mc‐Si wafer grain etching is 2 min, 3 min, and 4 min. The reflectivity of the mc‐Si wafer is assessed in this research for both before and after etching. Finally, the analysis on optimization of the etching rate to achieve enhanced reflectivity is investigated using convolutional neural network (CNN) model and linear regression model. There reflectivity data along with the expected etching time are used for the training of ML model sin both classification mode and regression mode. In addition, a CNN model to predict the etching time is trained using SEM images of the mc‐Si wafers after the etching. In the classification model test, the decision tree ML algorithm fits very well and gives 99.6% training accuracy and 76% testing accuracy. The linear regression model fits the data very well and yields the minimum mean squared error (MSE) of 0.062. This paper provides a method for improving the photovoltaic conversion efficiency and optical attributes of silicon solar cells manufactured from as‐cut boron doped p‐type multi‐crystalline silicon wafers using acid‐based chemical texturization via machine learning. A decreased reflectance, which can be attained by the right chemical etching conditions, is one of the key elements for raising solar cell efficiency. In this work, the mc‐Silicon wafer surface reflectance is obtained under (<2%) after optimization of wet chemical etching. The HF + HNO3 + CH3COOH chemical etchant is used in the ratio 1:3:2 at different conditions of the etching duration of 1 min, 2 min, 3 min, and 4 min, respectively. The as‐cut boron doped p‐type mc‐silicon wafers are analysed with ultraviolet–visible spectroscopy, optical microscopy, Fourier transforms infrared spectroscopy, thickness profilometer, and scanning electron microscopy before and after etching. The chemical etching solution produces good results in 3 min etched wafer, with a reflectivity value of <2%.The reflectivity and optical images are inputs to the convolutional neural network model and the linear regression model to obtain the etching rate for better reflectivity. The classification model provides 99.6% accuracy and the regression model results in the minimum mean squared error (MSE) of 0.062.

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