Abstract:Previous studies have considered the same temperature for all components of the silicon etching solution, and the effect of the temperature of the individual components on the etching results has not been explored. In the present study, a diamond-wire-sawn (DWS) multi-crystalline silicon wafer was etched twice for 50 s each time. The initial temperature of HF was selected to be room temperature, 55 and 66 °C, whereas those of H2O2 and Cu(NO3)2 varied between 40 and 70 °C, 40 and 72 °C, respectively. The temperature of the three components of the solution was allowed to change over time. The effects of H2O2, Cu(NO3)2, and HF temperatures on the etch morphology, reflectivity, and energy conversion efficiency of the fabricated solar cells were investigated. The saw marks of a DWS wafer were determined to be the preferred nucleation sites for the formation of the inverted pyramid (IP) structure. The optimum temperatures for etching Si to obtain a large area of IP structure were ~72 °C for Cu2+, ~25 °C for HF, and ~55 °C for H2O2. The strong isotropic etching ability of high-temperature HF caused the silicon crystal surface to deviate from the IP structure and left many recombination centers on the surface. A wafer with an IP structure on the entire surface exhibited the highest energy conversion efficiency of 18.21%. A simple wet-chemical post-processing step is expected to reduce the recombination centers and improve the energy conversion efficiency of the fabricated solar cell.

Effect of Additives on Making Texture Surface on Multicrystalline Silicon Wafer by Diamond Wire Sawing

A Metal-Free Additive Texturization Method Used for Diamond-Wire-sawn Multi-Crystalline Silicon Wafers

Surface damage and metal-catalyzed chemical etching investigation of multicrystalline silicon by diamond wire sawing

Cu-assisted Chemical Etching of Diamond Wire Sawn Multicrystalline Silicon Wafers for Texturing

Constructing Submicron Textures on Mc-Si Solar Cells Via Copper-Catalyzed Chemical Etching

An Innovative Light Trapping Structure Fabrication Method on Diamond-Wire-Sawing Multi-Crystalline Silicon Wafers

Versatile Strategies for Improving the Performance of Diamond Wire Sawn Mc-Si Solar Cells

Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

High-Efficient Solar Cells Textured by Cu/Ag-Cocatalyzed Chemical Etching on Diamond Wire Sawing Multicrystalline Silicon

Research of Texturization on Multi-crystalline Silicon Surface for Solar Cell

Acid Texturing of Large Area Multi-Crystalline Silicon Wafers for Solar Cell Fabrication

A high efficiency industrial polysilicon solar cell with a honeycomb-like surface fabricated by wet etching using a photoresist mask

Effects of H2O2, Cu(NO3)2 and HF temperatures on surface texturization of diamond-wire-sawn multicrystalline silicon wafer

MACE Texture Optimization for Mass Production of High-Efficiency Multi-Crystalline Cell and Module

TEXTURIZATION OF MONOCRYSTALLINE SILICON FOR SOLAR CELLS

A Continuous, Single-Face Wet Texturing Process for Industrial Multicrystalline Silicon Solar Cells Using a Surfactant Treated Photoresist Mask

Eliminating Deep Ditches on Textured Multi-crystalline Silicon Surfaces

Controllable nano-texturing of diamond wire sawing polysilicon wafers through low-cost copper catalyzed chemical etching

Surface formation, morphology, integrity and wire marks in diamond wire slicing of mono-crystalline silicon in the photovoltaic industry

Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching

INFLUENCE OF SUB-SURFACE DAMAGE ON TEXTURING OF MONOCRYSTALLINE SILICON WAFERS FOR SOLAR CELLS