Abstract:<p>Based on using first principles, we have discussed electronic properties and atomic structure of Mg-doped multilayer g-GaN. When only the bottom layer of bilayer g-GaN is doped with Mg, high concentration doped bilayer g-GaN exhibits a direct band gap characteristic. Compared with the doping position, the influence of doping concentration is more important. Due to large formation energy, the process of achieving high concentration doping in bilayer g-GaN is difficult. When all layers of multilayer g-GaN are doped with Mg atoms, the variable doping structure have a lower band gap and work function than uniform doping structure. And as the number of layers' increases, quantum confinement effect weakens, band gap and work function decline. Furthermore, there is a charge transfer between the s orbitals and p orbitals of Mg and the multilayer g-GaN.</p>

What problem does this paper attempt to address?

This paper aims to explore the electronic properties and atomic structure of Mg - doped multi - layer g - GaN (gallium nitride). Specifically, through the first - principles method, the research analyzes the influence of Mg doping on the energy band structure, band gap, work function and density of states of bilayer and multi - layer g - GaN under different doping conditions (including doping concentration and doping position). The main objectives of the research are: 1. **Understand the doping effect**: Explore how Mg doping affects the electronic properties of g - GaN, especially the changes in the band gap and work function. 2. **Optimize the performance of the photocathode**: By simulating different doping structures, provide theoretical guidance for the preparation of high - performance g - GaN photocathodes. The study found that a high doping concentration can lead to direct - band - gap characteristics, but at the same time it will increase the formation energy, making high - concentration doping difficult. 3. **Compare different doping models**: Compare the differences in electronic properties between the uniform doping and variable doping structures (that is, the doping concentration gradually decreases from the bottom layer to the surface layer) to determine which doping method is more conducive to improving the photoelectric performance of the material. The research results show that Mg doping can significantly change the electronic structure of g - GaN. Especially at a high doping concentration, g - GaN exhibits direct - band - gap characteristics, which helps to improve the quantum efficiency of the photocathode. However, a high doping concentration will also increase the work function of the material, which is not conducive to electron transport. Therefore, the research proposes that in practical applications, the doping concentration and doping position need to be comprehensively considered to optimize the performance of the g - GaN photocathode.

Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on first-principles